场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
IMLT65R040M2HXTMA1

IMLT65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

327 -
IMLT65R040M2HXTMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
S2M0080120J

S2M0080120J

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

230 -
S2M0080120J

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tj) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +20V, -5V 1324 pF @ 1000 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
NTHL032N065M3S

NTHL032N065M3S

SIC MOS TO247-3L 32MOHM 650V M3S

onsemi

815 -

-

- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 51A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1410 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IPDQ65R040CFD7AXTMA1

IPDQ65R040CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

392 -
IPDQ65R040CFD7AXTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IPQC65R040CFD7AXTMA1

IPQC65R040CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

200 -
IPQC65R040CFD7AXTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IPZA60R037CM8XKSA1

IPZA60R037CM8XKSA1

IPZA60R037CM8XKSA1

Infineon Technologies

195 -

-

CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tj) 10V 37mOhm @ 27A, 10V 4.7V @ 680µA 79 nC @ 10 V ±20V 3458 pF @ 400 V - 329W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
IPT65R040CFD7XTMA1

IPT65R040CFD7XTMA1

MOSFET N-CH 650V 8HSOF

Infineon Technologies

2,000 -
IPT65R040CFD7XTMA1

数据表

CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-2
SCT3105KRHRC15

SCT3105KRHRC15

1200V, 24A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

440 -
SCT3105KRHRC15

数据表

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 24A (Tc) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
IMTA65R040M2HXTMA1

IMTA65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

150 -
IMTA65R040M2HXTMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NVMFS5C604NWFT1G

NVMFS5C604NWFT1G

NFET SO8FL 60V 287A 1.2MO

onsemi

1,500 -
NVMFS5C604NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10 V 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 6400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
TK31V60W,LVQ

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage

2,455 -
TK31V60W,LVQ

数据表

DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
IMT65R057M1HXUMA1

IMT65R057M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,983 -
IMT65R057M1HXUMA1

数据表

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
PSMNR90-80CSFJ

PSMNR90-80CSFJ

PSMNR90-80CSF/SOT8005A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80CSFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 505A (Tc) 10V 0.9mOhm @ 25A, 10V 4V @ 1mA 463 nC @ 10 V ±20V 32115 pF @ 40 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
PSMNR90-80ASFJ

PSMNR90-80ASFJ

PSMNR90-80ASF/SOT8000A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80ASFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 505A (Tc) 10V 0.85mOhm @ 25A, 10V 4V @ 1mA 463 nC @ 10 V ±20V 32115 pF @ 40 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
SIHK055N60EF-T1GE3

SIHK055N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2,040 -
SIHK055N60EF-T1GE3

数据表

EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3667 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
PSMN1R0-100CSFJ

PSMN1R0-100CSFJ

PSMN1R0-100CSF/SOT8005A/CCPAK1

Nexperia USA Inc.

250 -
PSMN1R0-100CSFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 460A (Tc) 10V 1.04mOhm @ 25A, 10V 4V @ 1mA 539 nC @ 10 V ±20V 33624 pF @ 50 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
E4M0060075K1

E4M0060075K1

MOSFETS AUTOMOTIVE 126W 3.8V NC

Wolfspeed, Inc.

440 -
E4M0060075K1

数据表

E TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 35A (Tc) 15V 78mOhm @ 13.4A, 15V 3.8V @ 3.67mA 52 nC @ 15 V +19V, -8V 1203 pF @ 500 V - 126W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
NTH4L032N065M3S

NTH4L032N065M3S

SIC MOS TO247-4L 32MOHM 650V M3S

onsemi

618 -

-

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 50A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1410 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
PJMK074N60FRCH_T0_00201

PJMK074N60FRCH_T0_00201

600V/ 74M / 53A/ FAST RECOVERY Q

Panjit International Inc.

1,500 -
PJMK074N60FRCH_T0_00201

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
STWA67N60M6

STWA67N60M6

MOSFET N-CH 600V 52A TO247

STMicroelectronics

555 -
STWA67N60M6

数据表

MDmesh™ M6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 49mOhm @ 26A, 10V 4.75V @ 250µA 72.5 nC @ 10 V ±25V 3400 pF @ 100 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
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