场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商型号 | 可用性 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSG65N190CR RVG650V, 11A, PDFN56, E-MODE GAN TR |
2,999 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TSM60NE069PW C0G600V, 51A, SINGLE N-CHANNEL HIGH |
295 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V, 12V | 60mOhm @ 17A, 12V | 6V @ 3.5mA | 86 nC @ 10 V | ±30V | 3566 pF @ 300 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
AIMDQ75R060M1HXUMA1AUTOMOTIVE_SICMOS |
738 | - |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 15V, 20V | 78mOhm @ 11.1A, 18V | 5.6V @ 4mA | 23 nC @ 18 V | +23V, -5V | 779 pF @ 500 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
E3M0160120J2-TR160m 1200V SiC FET, TO-263-7 XL |
763 | - |
|
数据表 |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 18A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.8V @ 2.33mA | 28 nC @ 15 V | +19V, -8V | 730 pF @ 1000 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
NVHL050N65S3FSF3 FRFET AUTO 50MOHM TO-247 |
450 | - |
|
数据表 |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123 nC @ 10 V | ±30V | 5404 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
TSG65N195CE RVG650V, 11A, PDFN88, E-MODE GAN TR |
3,000 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IMBG120R034M2HXTMA1SIC DISCRETE |
980 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MXP120A080FW-GE3SILICON CARBIDE MOSFET |
540 | - |
|
- |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 18V, 20V | 100mOhm @ 20A, 20V | 2.69V @ 5mA | 47.3 nC @ 18 V | +22V, -10V | 1156 pF @ 800 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3L |
|
AOM060V75X2Q750V SILICON CARBIDE MOSFET |
330 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 29A (Tc) | 15V | 80mOhm @ 6A, 15V | 3.5V @ 6mA | 39.4 nC @ 15 V | +15V, -5V | 1165 pF @ 400 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
AOK060V75X2Q750V SILICON CARBIDE MOSFET |
240 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 29A (Tc) | 15V | 80mOhm @ 6A, 15V | 3.5V @ 6mA | 39.4 nC @ 15 V | +15V, -5V | 1165 pF @ 400 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
AUIRF7669L2TRMOSFET N-CH 100V 19A DIRECTFET |
3,964 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 114A (Tc) | 10V | 4.4mOhm @ 68A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 3.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
IMDQ75R040M1HXUMA1SILICON CARBIDE MOSFET |
674 | - |
|
数据表 |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 47A (Tc) | 15V, 20V | 37mOhm @ 16.6A, 20V | 5.6V @ 6mA | 34 nC @ 18 V | +23V, -5V | 1135 pF @ 500 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
NVH050N65S3FSF3 FRFET AUTO 50MOHM TO-247 |
443 | - |
|
数据表 |
SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123 nC @ 10 V | ±30V | 5404 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
SCT3080ARC15650V, 30A, 4-PIN THD, TRENCH-STR |
439 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tj) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
G3F75MT12J-TR1200V 75M TO-263-7 G3F SIC MOSFE |
800 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 31A (Tc) | 18V | 100mOhm @ 12A, 18V | 4.3V @ 9mA | 48 nC @ 18 V | +22V, -10V | 988 pF @ 800 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
IXTA1N200P3HV-TRLMOSFET N-CH 2000V 1A TO263HV |
789 | - |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5 nC @ 10 V | ±20V | 646 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263HV |
|
C3M0120065J-TRSIC, MOSFET, 120M, 650V, TO-263- |
1,590 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | 26 nC @ 15 V | +19V, -8V | 640 pF @ 400 V | - | 86W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IMT65R048M1HXUMA1SILICON CARBIDE MOSFET |
1,942 | - |
|
数据表 |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
|
SCT3080ARHRC15650V, 30A, 4-PIN THD, TRENCH-STR |
816 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 134W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
SICW025N065H4-BPSIC MOSFET,TO-247-4 |
360 | - |
|
数据表 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 107A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.5V @ 50mA | 275 nC @ 18 V | +18V, -5V | 5740 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |

