场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
TSG65N190CR RVG

TSG65N190CR RVG

650V, 11A, PDFN56, E-MODE GAN TR

Taiwan Semiconductor Corporation

2,999 -
TSG65N190CR RVG

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TSM60NE069PW C0G

TSM60NE069PW C0G

600V, 51A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

295 -
TSM60NE069PW C0G

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V, 12V 60mOhm @ 17A, 12V 6V @ 3.5mA 86 nC @ 10 V ±30V 3566 pF @ 300 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
AIMDQ75R060M1HXUMA1

AIMDQ75R060M1HXUMA1

AUTOMOTIVE_SICMOS

Infineon Technologies

738 -

-

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 15V, 20V 78mOhm @ 11.1A, 18V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
E3M0160120J2-TR

E3M0160120J2-TR

160m 1200V SiC FET, TO-263-7 XL

Wolfspeed, Inc.

763 -
E3M0160120J2-TR

数据表

E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 18A (Tc) 15V 208mOhm @ 8.5A, 15V 3.8V @ 2.33mA 28 nC @ 15 V +19V, -8V 730 pF @ 1000 V - 104W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
NVHL050N65S3F

NVHL050N65S3F

SF3 FRFET AUTO 50MOHM TO-247

onsemi

450 -
NVHL050N65S3F

数据表

SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 123 nC @ 10 V ±30V 5404 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
TSG65N195CE RVG

TSG65N195CE RVG

650V, 11A, PDFN88, E-MODE GAN TR

Taiwan Semiconductor Corporation

3,000 -
TSG65N195CE RVG

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IMBG120R034M2HXTMA1

IMBG120R034M2HXTMA1

SIC DISCRETE

Infineon Technologies

980 -

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
MXP120A080FW-GE3

MXP120A080FW-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

540 -

-

MaxSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 29A (Tc) 18V, 20V 100mOhm @ 20A, 20V 2.69V @ 5mA 47.3 nC @ 18 V +22V, -10V 1156 pF @ 800 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3L
AOM060V75X2Q

AOM060V75X2Q

750V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

330 -
AOM060V75X2Q

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
AOK060V75X2Q

AOK060V75X2Q

750V SILICON CARBIDE MOSFET

Alpha & Omega Semiconductor Inc.

240 -
AOK060V75X2Q

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
AUIRF7669L2TR

AUIRF7669L2TR

MOSFET N-CH 100V 19A DIRECTFET

Infineon Technologies

3,964 -
AUIRF7669L2TR

数据表

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 114A (Tc) 10V 4.4mOhm @ 68A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5660 pF @ 25 V - 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IMDQ75R040M1HXUMA1

IMDQ75R040M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

674 -
IMDQ75R040M1HXUMA1

数据表

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 47A (Tc) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 211W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
NVH050N65S3F

NVH050N65S3F

SF3 FRFET AUTO 50MOHM TO-247

onsemi

443 -
NVH050N65S3F

数据表

SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 123 nC @ 10 V ±30V 5404 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SCT3080ARC15

SCT3080ARC15

650V, 30A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

439 -
SCT3080ARC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tj) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) - - Through Hole TO-247-4L
G3F75MT12J-TR

G3F75MT12J-TR

1200V 75M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800 -

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 31A (Tc) 18V 100mOhm @ 12A, 18V 4.3V @ 9mA 48 nC @ 18 V +22V, -10V 988 pF @ 800 V - 140W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
IXTA1N200P3HV-TRL

IXTA1N200P3HV-TRL

MOSFET N-CH 2000V 1A TO263HV

Littelfuse Inc.

789 -

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2000 V 1A (Tc) 10V 40Ohm @ 500mA, 10V 4V @ 250µA 23.5 nC @ 10 V ±20V 646 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263HV
C3M0120065J-TR

C3M0120065J-TR

SIC, MOSFET, 120M, 650V, TO-263-

Wolfspeed, Inc.

1,590 -
C3M0120065J-TR

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 26 nC @ 15 V +19V, -8V 640 pF @ 400 V - 86W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-263-7
IMT65R048M1HXUMA1

IMT65R048M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,942 -
IMT65R048M1HXUMA1

数据表

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
SCT3080ARHRC15

SCT3080ARHRC15

650V, 30A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

816 -
SCT3080ARHRC15

数据表

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
SICW025N065H4-BP

SICW025N065H4-BP

SIC MOSFET,TO-247-4

Micro Commercial Co

360 -
SICW025N065H4-BP

数据表

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 650 V 107A (Tc) 18V 30mOhm @ 50A, 18V 4.5V @ 50mA 275 nC @ 18 V +18V, -5V 5740 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
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