场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
SI2301-3A

SI2301-3A

MOSFET SOT-23 P Channel 20V

MDD

249,000 -
SI2301-3A

数据表

SOT-23 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 3.3V, 4.5V 90mOhm @ 3A, 4.5V 1V @ 250µA 6.6 nC @ 10 V ±10V 330 pF @ 10 V - 225mW (Ta) -55°C ~ 150°C - - Surface Mount SOT-23
NTMFS4C10NT1G-001

NTMFS4C10NT1G-001

MOSFET N-CH 30V 8.2A/46A 5DFN

onsemi

9,845 -
NTMFS4C10NT1G-001

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 8.2A (Ta), 46A (Tc) 4.5V, 10V 6.95mOhm @ 30A, 10V 2.2V @ 250µA 18.6 nC @ 10 V ±20V 987 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
PHT6N06LT,135

PHT6N06LT,135

MOSFET N-CH 55V 2.5A SOT223

NXP USA Inc.

8,817 -

-

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.5A (Ta) 5V 150mOhm @ 5A, 5V 2V @ 1mA 4.5 nC @ 5 V ±13V 330 pF @ 25 V - 1.8W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-73
FQD4N20TM

FQD4N20TM

MOSFET N-CH 200V 3A DPAK

onsemi

4,547 -
FQD4N20TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 1.4Ohm @ 1.5A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
FDFMA2P029Z

FDFMA2P029Z

MOSFET P-CH 20V 3.1A 6MICROFET

onsemi

2,287 -
FDFMA2P029Z

数据表

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.1A (Ta) 2.5V, 4.5V 95mOhm @ 3.1A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±12V 720 pF @ 10 V Schottky Diode (Isolated) 1.4W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
AS2312

AS2312

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

47,301 -
AS2312

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 18mOhm @ 6.8A, 4.5V 1V @ 250µA 11.05 nC @ 4.5 V ±10V 888 pF @ 10 V - 1.2W (Ta) 150°C (TJ) - - Surface Mount SOT-23
DMP210DUFB4-7

DMP210DUFB4-7

MOSFET P-CH 20V 200MA 3DFN

Diodes Incorporated

36,094 -

-

- 3-XFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.2V, 4.5V 5Ohm @ 100mA, 4.5V 1V @ 250µA - ±10V 175 pF @ 15 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN1006-3
AS2324

AS2324

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

28,774 -
AS2324

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Ta) 4.5V, 10V 280mOhm @ 2A, 10V 3V @ 250µA 5.3 nC @ 10 V ±20V 330 pF @ 50 V - 1.2W (Ta) 150°C (TJ) - - Surface Mount SOT-23
NTNS3A65PZT5GHW

NTNS3A65PZT5GHW

MOSFET P-CH 20V 281MA SOT883

onsemi

3,794 -

-

- 3-XFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 281mA (Ta) 1.5V, 4.5V 1.3Ohm @ 200mA, 4.5V 1V @ 250µA 1.1 nC @ 4.5 V ±8V 44 pF @ 10 V - 155mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-883 (XDFN3) (1x0.6)
AS3401

AS3401

P-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

16,991 -
AS3401

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 2.5V, 10V 55mOhm @ 4.4A, 10V 1.4V @ 250µA 7.2 nC @ 10 V ±12V 680 pF @ 15 V - 1.2W (Ta) 150°C (TJ) - - Surface Mount SOT-23
FDFMA3P029Z

FDFMA3P029Z

MOSFET P-CH 30V 3.3A 6MICROFET

onsemi

15,000 -
FDFMA3P029Z

数据表

PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 3.3A (Ta) - 87mOhm @ 3.3A, 10V 3V @ 250µA 10 nC @ 10 V - 435 pF @ 15 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MLP (2x2)
BUK6209-30C,118

BUK6209-30C,118

MOSFET N-CH 30V 50A DPAK

NXP USA Inc.

9,725 -
BUK6209-30C,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) - 9.8mOhm @ 12A, 10V 2.8V @ 1mA 30.5 nC @ 10 V ±16V 1760 pF @ 25 V - 80W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
PHT6N06T,135

PHT6N06T,135

MOSFET N-CH 55V 5.5A SOT223

NXP USA Inc.

2,110 -

-

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 5.5A (Tc) 10V 150mOhm @ 5A, 10V 4V @ 1mA 5.6 nC @ 10 V ±20V 175 pF @ 25 V - 8.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SC-73
RW1E014SNT2R

RW1E014SNT2R

MOSFET N-CH 30V 1.4A WEMT6

Rohm Semiconductor

7,791 -
RW1E014SNT2R

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 1.4A, 10V 2.5V @ 1mA 1.4 nC @ 5 V ±20V 70 pF @ 10 V - 400mW (Ta) 150°C (TJ) - - Surface Mount 6-WEMT
PSMN038-100K,518

PSMN038-100K,518

MOSFET N-CH 100V 8SO

Nexperia USA Inc.

5,168 -
PSMN038-100K,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.3A (Tj) 10V 38mOhm @ 5.2A, 10V 4V @ 1mA 43 nC @ 10 V ±20V 1740 pF @ 25 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDS6690A-NBNP006

FDS6690A-NBNP006

SINGLE N-CHANNEL, LOGIC LEVEL, P

onsemi

6,965 -

-

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V 3V @ 250µA 16 nC @ 5 V ±20V 1205 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
GSF0301

GSF0301

MOSFET, N-CH, SINGLE, 600MA, 30V

Good-Ark Semiconductor

5,858 -
GSF0301

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 600mA (Tc) 2.5V, 4.5V 500mOhm @ 300mA, 4.5V 1.2V @ 250µA 5.2 nC @ 4.5 V ±12V 146 pF @ 15 V - 310mW (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
AS3400

AS3400

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

5,701 -
AS3400

数据表

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Ta) 2.5V, 10V 27mOhm @ 5.6A, 10V 1.5V @ 250µA 4.8 nC @ 4.5 V ±12V 535 pF @ 15 V - 1.2W (Ta) 150°C (TJ) - - Surface Mount SOT-23
FDN340P

FDN340P

SOT-23 MOSFETS ROHS

UMW

3,173 -
FDN340P

数据表

UMW TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 70mOhm @ 2A, 4.5V 1.5V @ 250µA 8 nC @ 4.5 V ±8V 600 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount SOT-23
IPSA70R1K4P7SAKMA1

IPSA70R1K4P7SAKMA1

MOSFET N-CH 700V 4A TO251-3

Infineon Technologies

9,510 -
IPSA70R1K4P7SAKMA1

数据表

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 400 V ±16V 158 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
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