场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NTD4909N-1G

NTD4909N-1G

MOSFET N-CH 30V 8.8A/41A IPAK

onsemi

3,240 -
NTD4909N-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V ±20V 1314 pF @ 15 V - 1.37W (Ta), 29.4W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
EFC4611-TR

EFC4611-TR

N-CHANNEL POWER MOSFET

onsemi

1,570,000 -
EFC4611-TR

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SFT1423-S-TL-E

SFT1423-S-TL-E

MOSFET N-CH 500V 2A TP-FA

onsemi

3,561 -

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete - - - 2A (Tj) - - - - - - - - - - - Surface Mount TP-FA
FQD630TF

FQD630TF

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor

207,503 -
FQD630TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
MMSF2P02ER2

MMSF2P02ER2

P-CHANNEL POWER MOSFET

onsemi

94,753 -
MMSF2P02ER2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4849NT1G

NTMFS4849NT1G

MOSFET N-CH 30V 10.2A/71A 5DFN

onsemi

6,083 -
NTMFS4849NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.2A (Ta), 71A (Tc) 4.5V, 11.5V 5.1mOhm @ 30A, 10V 2.5V @ 250µA 22 nC @ 4.5 V ±16V 2040 pF @ 12 V - 870mW (Ta), 42.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
2SK3449

2SK3449

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

51,912 -
2SK3449

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDU6612A

FDU6612A

MOSFET N-CH 30V 9.5A/30A IPAK

Fairchild Semiconductor

44,990 -
FDU6612A

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 30A (Tc) 4.5V, 10V 20mOhm @ 9.5A, 10V 3V @ 250µA 9.4 nC @ 5 V ±20V 660 pF @ 15 V - 2.8W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FQD20N06LETM

FQD20N06LETM

MOSFET N-CH 60V 17.2A DPAK

Fairchild Semiconductor

44,818 -
FQD20N06LETM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17.2A (Tc) 5V, 10V 60mOhm @ 8.6A, 10V 2.5V @ 250µA 13 nC @ 5 V ±20V 665 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FQP13N06

FQP13N06

MOSFET N-CH 60V 13A TO220-3

Fairchild Semiconductor

36,013 -
FQP13N06

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13A (Tc) 10V 135mOhm @ 6.5A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 310 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
MTP1N60E

MTP1N60E

N-CHANNEL POWER MOSFET

onsemi

20,578 -
MTP1N60E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FQU8P10TU

FQU8P10TU

MOSFET P-CH 100V 6.6A IPAK

onsemi

9,731 -
FQU8P10TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 530mOhm @ 3.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
SFT1431-W

SFT1431-W

MOSFET N-CH 35V 11A IPAK/TP

onsemi

4,409 -
SFT1431-W

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 35 V 11A (Ta) 4V, 10V 25mOhm @ 5.5A, 10V 2.6V @ 1mA 17.3 nC @ 10 V ±20V 960 pF @ 20 V - 1W (Ta), 15W (Tc) 150°C (TJ) - - Through Hole IPAK/TP
FDMA0104

FDMA0104

TRANS MOSFET N-CH 20V 9.4A 6PIN

Fairchild Semiconductor

11,154 -
FDMA0104

数据表

PowerTrench® 6-WDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) - 14.5mOhm @ 9.4A, 4.5V 1V @ 250µA 17.5 nC @ 4.5 V - 1680 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
FQP4N20

FQP4N20

MOSFET N-CH 200V 3.6A TO220-3

Fairchild Semiconductor

10,753 -
FQP4N20

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
GSFN3019

GSFN3019

MOSFET, P-CH, SINGLE, -30.00A, -

Good-Ark Semiconductor

9,909 -
GSFN3019

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 19mOhm @ 8A, 10V 2.9V @ 250µA 17 nC @ 4.5 V ±25V 2500 pF @ 15 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.05)
FQB9N08TM

FQB9N08TM

MOSFET N-CH 80V 9.3A D2PAK

Fairchild Semiconductor

7,169 -
FQB9N08TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 210mOhm @ 4.65A, 10V 4V @ 250µA 7.7 nC @ 10 V ±25V 250 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
2SK1470-TD-E

2SK1470-TD-E

NCH 4V DRIVE SERIES

onsemi

7,112 -
2SK1470-TD-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FQU2N50BTU-WS

FQU2N50BTU-WS

MOSFET N-CH 500V 1.6A IPAK

onsemi

6,850 -
FQU2N50BTU-WS

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 5.3Ohm @ 800mA, 10V 3.7V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
SFU9230BTU

SFU9230BTU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,040 -
SFU9230BTU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 5.4A (Tc) 10V 800mOhm @ 2.7A, 10V 4V @ 250µA 45 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
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