场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
RJK03M9DNS-WS#J5

RJK03M9DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,572 -
RJK03M9DNS-WS#J5

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FQB3P20TM

FQB3P20TM

MOSFET P-CH 200V 2.8A D2PAK

Fairchild Semiconductor

3,077 -
FQB3P20TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
ISL9N310AD3

ISL9N310AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,028 -
ISL9N310AD3

数据表

UltraFET® TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-251 (IPAK)
FQI5P10TU

FQI5P10TU

MOSFET P-CH 100V 4.5A I2PAK

Fairchild Semiconductor

3,000 -
FQI5P10TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 1.05Ohm @ 2.25A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
NTR4171PT1G

NTR4171PT1G

MOSFET P-CH 30V 2.2A SOT23

UMW

3,000 -
NTR4171PT1G

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AO3403A

AO3403A

SOT-23-3 POWER MOSFETS ROHS

UMW

2,976 -
AO3403A

数据表

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 75mOhm @ 2.6A, 10V 1.4V @ 250µA 7.2 nC @ 10 V ±12V 315 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
AO3416A

AO3416A

20V 6.5A 22MR@4.5V,6.5A 1.4W 1.1

UMW

2,802 -
AO3416A

数据表

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.8V, 4.5V 25mOhm @ 6.5A, 4.5V 1.1V @ 250µA 10 nC @ 4.5 V ±8V 1650 pF @ 10 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount SOT-23
AO3414A

AO3414A

20V 4.2A 400MW 35MR@4.5V,3.6A 1.

UMW

2,317 -
AO3414A

数据表

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.8V, 4.5V 26mOhm @ 4.2A, 4.5V 1V @ 250µA 6.2 nC @ 4.5 V ±8V 436 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
2SK1482-T-AZ

2SK1482-T-AZ

SMALL SIGNAL FET

NEC Corporation

2,162 -
2SK1482-T-AZ

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4V, 10V 400mOhm @ 500mA, 10V 2.5V @ 1mA - ±20V 230 pF @ 10 V - 750W (Ta) 150°C - - Through Hole TO-92
FQI17N08LTU

FQI17N08LTU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor

2,000 -
FQI17N08LTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 3.75W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
FQD5N30TM

FQD5N30TM

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor

1,623 -
FQD5N30TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FQB20N06TM

FQB20N06TM

MOSFET N-CH 60V 20A D2PAK

Fairchild Semiconductor

1,550 -
FQB20N06TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 3.75W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPSA70R600CEAKMA1

IPSA70R600CEAKMA1

MOSFET N-CH 700V 10.5A TO251-3

Infineon Technologies

4,450 -
IPSA70R600CEAKMA1

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 10.5A (Tc) 10V 600mOhm @ 1A, 10V 3.5V @ 210µA 22 nC @ 10 V ±20V 474 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
FQB3N40TM

FQB3N40TM

MOSFET N-CH 400V 2.5A D2PAK

Fairchild Semiconductor

1,490 -
FQB3N40TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.5A (Tc) 10V 3.4Ohm @ 1.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
FQPF2P25

FQPF2P25

MOSFET P-CH 250V 1.8A TO220F

Fairchild Semiconductor

1,391 -
FQPF2P25

数据表

QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 250 V 1.8A (Tc) 10V 4Ohm @ 900mA, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQP3N50C

FQP3N50C

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,362 -
FQP3N50C

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FQI10N20CTU

FQI10N20CTU

MOSFET N-CH 200V 9.5A I2PAK

Fairchild Semiconductor

1,055 -
FQI10N20CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
NTMFS4935NT1G

NTMFS4935NT1G

MOSFET N-CH 30V 13A/93A 5DFN

onsemi

2,260 -
NTMFS4935NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 93A (Tc) 4.5V, 10V 3.2mOhm @ 30A, 10V 2.2V @ 250µA 49.4 nC @ 10 V ±20V 4850 pF @ 15 V - 930mW (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
5LN01C-TB-E

5LN01C-TB-E

MOSFET N-CH 50V 100MA 3CP

onsemi

3,954 -
5LN01C-TB-E

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50 V 100mA (Ta) 1.5V, 4V 7.8Ohm @ 50mA, 4V - 1.57 nC @ 10 V ±10V 6.6 pF @ 10 V - 250mW (Ta) 150°C (TJ) - - Surface Mount SC-59-3/CP3
HUFA75321D3ST

HUFA75321D3ST

N-CHANNEL ULTRAFET 55V, 20A, 36

Fairchild Semiconductor

78,075 -
HUFA75321D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
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