场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NTD23N03R-001

NTD23N03R-001

MOSFET N-CH 25V 3.8A/17.1A IPAK

onsemi

9,821 -
NTD23N03R-001

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25 V 3.8A (Ta), 17.1A (Tc) 4V, 5V 45mOhm @ 6A, 10V 2V @ 250µA 3.76 nC @ 4.5 V ±20V 225 pF @ 20 V - 1.14W (Ta), 22.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
IPS65R950C6AKMA1

IPS65R950C6AKMA1

MOSFET N-CH 650V 4.5A TO251-3

Infineon Technologies

5,600 -
IPS65R950C6AKMA1

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
BSP125L6327HTSA1

BSP125L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies

4,535 -
BSP125L6327HTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 4.5V, 10V 45Ohm @ 120mA, 10V 2.3V @ 94µA 6.6 nC @ 10 V ±20V 150 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
NTMFS4835NT3G

NTMFS4835NT3G

MOSFET N-CH 30V 13A/130A 5DFN

onsemi

3,875 -
NTMFS4835NT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 130A (Tc) 4.5V, 11.5V 3.5mOhm @ 30A, 10V 2.5V @ 250µA 52 nC @ 11.5 V ±20V 3100 pF @ 12 V - 890mW (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
NTMS4503NR2G

NTMS4503NR2G

MOSFET N-CH 28V 9A 8SOIC

onsemi

3,772 -
NTMS4503NR2G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28 V 9A (Ta) 4.5V, 10V 8mOhm @ 14A, 10V 2V @ 250µA 23 nC @ 4.5 V ±20V 2400 pF @ 16 V - 930mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTLGF3402PT2G

NTLGF3402PT2G

MOSFET P-CH 20V 2.3A 6DFN

onsemi

5,237 -
NTLGF3402PT2G

数据表

FETKY™ 6-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta) 2.5V, 4.5V 140mOhm @ 2.7A, 4.5V 2V @ 250µA 10 nC @ 4.5 V ±12V 350 pF @ 10 V - 1.14W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (3x3)
NDD03N80Z-1G

NDD03N80Z-1G

MOSFET N-CH 800V 2.9A IPAK

onsemi

4,868 -
NDD03N80Z-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.9A (Tc) 10V 4.5Ohm @ 1.2A, 10V 4.5V @ 50µA 17 nC @ 10 V ±30V 440 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
3LN01SS-TL-E

3LN01SS-TL-E

MOSFET N-CH 30V 150MA SC81

onsemi

6,630 -
3LN01SS-TL-E

数据表

- SC-81 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 150mA (Ta) 1.5V, 4V 3.7Ohm @ 80mA, 4V - 1.58 nC @ 10 V ±10V 7 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount 3-SSFP
NTMFS4707NT1G

NTMFS4707NT1G

MOSFET N-CH 30V 6.9A 5DFN

onsemi

8,547 -
NTMFS4707NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta) 4.5V, 10V 13mOhm @ 10A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 735 pF @ 24 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
SPS01N60C3BKMA1

SPS01N60C3BKMA1

0.8A, 600V, N-CHANNEL MOSFET, T

Infineon Technologies

30,000 -
SPS01N60C3BKMA1

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 800mA (Tc) 10V 6Ohm @ 500mA, 10V 3.9V @ 250µA 5 nC @ 10 V ±20V 100 pF @ 25 V - 11W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
HUF76121P3

HUF76121P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

26,402 -
HUF76121P3

数据表

UltraFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -40°C ~ 150°C (TJ) - - Through Hole TO-220AB
SPS02N60C3BKMA1

SPS02N60C3BKMA1

LOW POWER_LEGACY

Infineon Technologies

4,845 -
SPS02N60C3BKMA1

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
NTMFS4C50NT1G

NTMFS4C50NT1G

MOSFET N-CH 30V 46A 5DFN

onsemi

4,583 -

-

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete - - - 21.7A (Ta) - - - - - - - - - - - Surface Mount 5-DFN (5x6) (8-SOFL)
NTMFS4935NBT1G

NTMFS4935NBT1G

MOSFET N-CH 30V 13A/93A 5DFN

onsemi

6,382 -
NTMFS4935NBT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 93A (Tc) 4.5V, 10V 3.2mOhm @ 30A, 10V 2V @ 250µA 49.4 nC @ 10 V ±20V 4850 pF @ 15 V - 930mW (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
RFP14N05L

RFP14N05L

MOSFET N-CH 50V 14A TO220-3

Fairchild Semiconductor

15,914 -
RFP14N05L

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50 V 14A (Tc) 5V 100mOhm @ 14A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 670 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
HUF76609D3

HUF76609D3

MOSFET N-CH 100V 10A IPAK

Fairchild Semiconductor

15,455 -
HUF76609D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V 3V @ 250µA 16 nC @ 10 V ±16V 425 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
ATP206-TL-H

ATP206-TL-H

MOSFET N-CH 40V 40A ATPAK

onsemi

8,160 -
ATP206-TL-H

数据表

- ATPAK (2 Leads+Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 16mOhm @ 20A, 10V - 27 nC @ 10 V ±20V 1630 pF @ 20 V - 40W (Tc) 150°C (TJ) - - Surface Mount ATPAK
MMDF6N02HDR2

MMDF6N02HDR2

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

14,278 -
MMDF6N02HDR2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRF621

IRF621

N-CHANNEL POWER MOSFET

Harris Corporation

13,250 -
IRF621

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SFP9620

SFP9620

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

12,883 -
SFP9620

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.8A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 540 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
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