场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
BSO065N03MSGXUMA1

BSO065N03MSGXUMA1

MOSFET N-CH 30V 13A 8DSO

Infineon Technologies

3,656 -
BSO065N03MSGXUMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 40 nC @ 10 V ±20V 3100 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
BUZ73A

BUZ73A

MOSFET N-CH 200V 5.5A TO220-3

Harris Corporation

12,259 -
BUZ73A

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BUK624R5-30C

BUK624R5-30C

PFET, 90A I(D), 30V, 0.0075OHM,

Nexperia USA Inc.

10,000 -
BUK624R5-30C

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Ta) 4.5V, 10V 4.5mOhm @ 25A, 10V 2.8V @ 1mA 78 nC @ 10 V ±16V 4707 pF @ 25 V - 158W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
IPP230N06L3G

IPP230N06L3G

N-CHANNEL POWER MOSFET

Infineon Technologies

9,620 -
IPP230N06L3G

数据表

OptiMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 23mOhm @ 30A, 10V 2.2V @ 11µA 10 nC @ 4.5 V ±20V 1600 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
BUK663R5-30C,118

BUK663R5-30C,118

MOSFET N-CH 30V 100A D2PAK

NXP USA Inc.

8,673 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
BSC200P03LSG

BSC200P03LSG

P-CHANNEL POWER MOSFET

Infineon Technologies

8,671 -
BSC200P03LSG

数据表

OptiMOS™ 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 9.9A (Ta), 12.5A (Tc) 10V 20mOhm @ 12.5A, 10V 1V @ 100µA 48.5 nC @ 10 V ±25V 2430 pF @ 15 V - 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
RFD20N03SM

RFD20N03SM

N-CHANNEL POWER MOSFET

Harris Corporation

8,441 -
RFD20N03SM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
HUF76107P3

HUF76107P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8,400 -
HUF76107P3

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±16V 315 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
ISL9N318AD3ST

ISL9N318AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,500 -
ISL9N318AD3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 900 pF @ 15 V - 55W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
2SK2624LS

2SK2624LS

N-CHANNEL SILICON MOSFET

onsemi

7,443 -
2SK2624LS

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD5N50

NTD5N50

N-CHANNEL POWER MOSFET

onsemi

7,050 -
NTD5N50

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRF621R

IRF621R

N-CHANNEL POWER MOSFET

Harris Corporation

6,837 -
IRF621R

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
NTP125N02RG

NTP125N02RG

MOSFET N-CH 24V 15.9A TO220AB

onsemi

7,800 -
NTP125N02RG

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 15.9A (Ta) 4.5V, 10V 4.6mOhm @ 20A, 10V 2V @ 250µA 28 nC @ 4.5 V ±20V 3440 pF @ 20 V - 1.98W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GSFQ2307

GSFQ2307

MOSFET, P-CH, SINGLE, -9.6A, -20

Good-Ark Semiconductor

6,000 -
GSFQ2307

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.6A (Tc) 1.8V, 4.5V 23mOhm @ 5A, 4.5V 1V @ 250µA 29 nC @ 4.5 V ±10V 2430 pF @ 15 V - 2.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
SI4822DY

SI4822DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

5,209 -
SI4822DY

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9.5mOhm @ 12.5A, 10V 3V @ 250µA 33 nC @ 5 V ±20V 2180 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTQS6463R2

NTQS6463R2

MOSFET P-CH 20V 6.8A 8TSSOP

onsemi

2,031 -
NTQS6463R2

数据表

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 2.5V, 4.5V 20mOhm @ 6.8A, 4.5V 900mV @ 250µA 50 nC @ 5 V ±12V - - 930mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
BUK7535-100A,127

BUK7535-100A,127

MOSFET N-CH 100V 41A TO220AB

NXP USA Inc.

5,000 -

-

* - Tube Active - - - - - - - - - - - - - - - - -
BSB053N03LPG

BSB053N03LPG

N-CHANNEL POWER MOSFET

Infineon Technologies

5,000 -
BSB053N03LPG

数据表

OptiMOS™ 3-WDSON Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 71A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2.2V @ 250µA 29 nC @ 10 V ±20V 2700 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
3LP01SS-TL-E

3LP01SS-TL-E

MOSFET P-CH 30V 100MA 3SSFP

onsemi

8,755 -
3LP01SS-TL-E

数据表

- SC-81 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 1.5V, 4V 10.4Ohm @ 50mA, 4V - 1.43 nC @ 10 V ±10V 7.5 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount 3-SSFP
RFD15N06LESM

RFD15N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

4,077 -
RFD15N06LESM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - - - Surface Mount TO-252 (DPAK)
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