二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MURT10020R

MURT10020R

DIODE MODULE GP 200V 50A 3TOWER

GeneSiC Semiconductor

8,838 -
MURT10020R

数据表

- Three Tower Bulk Obsolete 1 Pair Common Anode Standard, Reverse Polarity 200 V 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBR20030CT

MBR20030CT

DIODE MOD SCHOTT 30V 200A 2TOWER

GeneSiC Semiconductor

2,218 -
MBR20030CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 30 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR20030CTR

MBR20030CTR

DIODE MOD SCHOTT 30V 200A 2TOWER

GeneSiC Semiconductor

6,574 -
MBR20030CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 30 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR200100CT

MBR200100CT

DIODE MOD SCHOT 100V 200A 2TOWER

GeneSiC Semiconductor

8,219 -
MBR200100CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 100 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR200100CTR

MBR200100CTR

DIODE MOD SCHOT 100V 200A 2TOWER

GeneSiC Semiconductor

3,373 -
MBR200100CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 100 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20020CT

MBR20020CT

DIODE MOD SCHOTT 20V 200A 2TOWER

GeneSiC Semiconductor

6,209 -
MBR20020CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 20 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20020CTR

MBR20020CTR

DIODE MOD SCHOTT 20V 200A 2TOWER

GeneSiC Semiconductor

2,926 -
MBR20020CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 20 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20035CT

MBR20035CT

DIODE MOD SCHOTT 35V 200A 2TOWER

GeneSiC Semiconductor

2,004 -
MBR20035CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 35 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20035CTR

MBR20035CTR

DIODE MOD SCHOTT 35V 200A 2TOWER

GeneSiC Semiconductor

7,242 -
MBR20035CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 35 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20040CT

MBR20040CT

DIODE MOD SCHOTT 40V 200A 2TOWER

GeneSiC Semiconductor

4,200 -
MBR20040CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 40 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20040CTR

MBR20040CTR

DIODE MOD SCHOTT 40V 200A 2TOWER

GeneSiC Semiconductor

5,275 -
MBR20040CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 40 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20045CT

MBR20045CT

DIODE MOD SCHOTT 45V 200A 2TOWER

GeneSiC Semiconductor

3,774 -
MBR20045CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 45 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20045CTR

MBR20045CTR

DIODE MOD SCHOTT 45V 200A 2TOWER

GeneSiC Semiconductor

9,046 -
MBR20045CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 45 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20060CT

MBR20060CT

DIODE MOD SCHOTT 60V 200A 2TOWER

GeneSiC Semiconductor

7,910 -
MBR20060CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 60 V 200A (DC) 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20060CTR

MBR20060CTR

DIODE MOD SCHOTT 60V 200A 2TOWER

GeneSiC Semiconductor

2,410 -
MBR20060CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 60 V 200A (DC) 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20080CT

MBR20080CT

DIODE MOD SCHOTT 80V 200A 2TOWER

GeneSiC Semiconductor

2,323 -
MBR20080CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR20080CTR

MBR20080CTR

DIODE MOD SCHOTT 80V 200A 2TOWER

GeneSiC Semiconductor

2,386 -
MBR20080CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 80 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount Twin Tower
MBR200150CT

MBR200150CT

DIODE MOD SCHOT 150V 100A 2TOWER

GeneSiC Semiconductor

2,961 -
MBR200150CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR200150CTR

MBR200150CTR

DIODE MOD SCHOT 150V 100A 2TOWER

GeneSiC Semiconductor

5,645 -
MBR200150CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR200200CT

MBR200200CT

DIODE MOD SCHOT 200V 100A 2TOWER

GeneSiC Semiconductor

9,346 -
MBR200200CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
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