二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MBR30040CT

MBR30040CT

DIODE MOD SCHOTT 40V 150A 2TOWER

GeneSiC Semiconductor

2,203 -
MBR30040CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 40 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30040CTR

MBR30040CTR

DIODE MOD SCHOTT 40V 150A 2TOWER

GeneSiC Semiconductor

9,505 -
MBR30040CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 40 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30045CT

MBR30045CT

DIODE MOD SCHOTT 45V 150A 2TOWER

GeneSiC Semiconductor

6,915 -
MBR30045CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 45 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30045CTR

MBR30045CTR

DIODE MOD SCHOTT 45V 150A 2TOWER

GeneSiC Semiconductor

4,063 -
MBR30045CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 45 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30060CT

MBR30060CT

DIODE MOD SCHOTT 60V 150A 2TOWER

GeneSiC Semiconductor

5,569 -
MBR30060CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 60 V 150A 750 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30060CTR

MBR30060CTR

DIODE MOD SCHOTT 60V 150A 2TOWER

GeneSiC Semiconductor

5,659 -
MBR30060CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 60 V 150A 750 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30080CT

MBR30080CT

DIODE MOD SCHOTT 80V 150A 2TOWER

GeneSiC Semiconductor

9,587 -
MBR30080CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30080CTR

MBR30080CTR

DIODE MOD SCHOTT 80V 150A 2TOWER

GeneSiC Semiconductor

4,958 -
MBR30080CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 80 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR300150CT

MBR300150CT

DIODE MOD SCHOT 150V 150A 2TOWER

GeneSiC Semiconductor

2,028 -
MBR300150CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 150A 880 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C - - Chassis Mount Twin Tower
MBR300150CTR

MBR300150CTR

DIODE MOD SCHOT 150V 150A 2TOWER

GeneSiC Semiconductor

9,268 -
MBR300150CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 150 V 150A 880 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C - - Chassis Mount Twin Tower
MBR300200CT

MBR300200CT

DIODE MOD SCHOT 200V 150A 2TOWER

GeneSiC Semiconductor

6,256 -
MBR300200CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 150A 920 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C - - Chassis Mount Twin Tower
MBR300200CTR

MBR300200CTR

DIODE MOD SCHOT 200V 150A 2TOWER

GeneSiC Semiconductor

9,479 -
MBR300200CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200 V 150A 920 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C - - Chassis Mount Twin Tower
2952211

2952211

DIODE MODULE GP 1000V MODULE

Phoenix Contact

2,625 -
2952211

数据表

- Module Bulk Active 14 Common Anode Standard 1000 V - - Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -20°C ~ 50°C - - DIN Rail Module
286-822

286-822

DIODE MODULE GP 4000V 5.1MA

WAGO Corporation

6,690 -
286-822

数据表

- Module Box Active 1 Pair Common Cathode Standard 4000 V 5.1mA - Small Signal =< 200mA (Io), Any Speed - - -25°C ~ 40°C - - Socketable -
MURT20005

MURT20005

DIODE MODULE GP 50V 100A 3TOWER

GeneSiC Semiconductor

7,573 -
MURT20005

数据表

- Three Tower Bulk Obsolete 1 Pair Common Cathode Standard 50 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT20005R

MURT20005R

DIODE MODULE GP 50V 100A 3TOWER

GeneSiC Semiconductor

7,799 -
MURT20005R

数据表

- Three Tower Bulk Obsolete 1 Pair Common Anode Standard 50 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
VS-VSMD400CW60

VS-VSMD400CW60

DIODE MOD GP 600V 200A TO-244AB

Vishay General Semiconductor - Diodes Division

6,275 -
VS-VSMD400CW60

数据表

- TO-244AB Bulk Obsolete 1 Pair Common Cathode Standard 600 V 200A 1.31 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 200 µA @ 600 V -40°C ~ 175°C - - Chassis Mount TO-244AB
M50100CC1200

M50100CC1200

DIODE MOD GP 1200V 100A MOD

Sensata-Crydom

5,977 -
M50100CC1200

数据表

- Module Bulk Obsolete 1 Pair Common Cathode Standard 1200 V 100A 1.2 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
M5060THA1600

M5060THA1600

DIODE MODULE GP 600V 60A MODULE

Sensata-Crydom

9,060 -
M5060THA1600

数据表

- Module Bulk Active 1 Pair Common Cathode Standard 600 V 60A 1.35 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
M5060CC1600

M5060CC1600

DIODE MODULE GP 1600V 60A MODULE

Sensata-Crydom

9,371 -
M5060CC1600

数据表

- Module Bulk Active 1 Pair Common Cathode Standard 1600 V 60A (DC) 1.35 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
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