二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MBR200200CTR

MBR200200CTR

DIODE MOD SCHOT 200V 100A 2TOWER

GeneSiC Semiconductor

3,793 -
MBR200200CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
QRD1210T30

QRD1210T30

DIODE MODULE GP 1200V 53A MODULE

Powerex Inc.

4,929 -
QRD1210T30

数据表

- Module Bulk Obsolete 1 Pair Series Connection Standard 1200 V 53A 3.5 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 mA @ 1200 V - - - Chassis Mount Module
DD200KB220

DD200KB220

DIODE MODULE GEN PURP 2200V 200A

SanRex Corporation

3,266 -
DD200KB220

数据表

- Module Active 1 Pair Series Connection Standard 2200 V 200A 1.3 V @ 620 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 2200 V -40°C ~ 150°C - - Chassis Mount -
QRF0630R30

QRF0630R30

DIODE MODULE GP 600V 210A MODULE

Powerex Inc.

7,544 -
QRF0630R30

数据表

- Module Bulk Obsolete 1 Pair Common Anode Standard 600 V 210A (DC) 2.5 V @ 210 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 1 mA @ 600 V -40°C ~ 150°C - - Chassis Mount Module
QRC0630R30

QRC0630R30

DIODE MODULE GP 600V 210A MODULE

Powerex Inc.

9,921 -
QRC0630R30

数据表

- Module Bulk Obsolete 1 Pair Common Cathode Standard 600 V 210A (DC) 2.5 V @ 210 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 1 mA @ 600 V -40°C ~ 150°C - - Chassis Mount Module
MUR40005CT

MUR40005CT

DIODE MODULE GP 50V 200A 2TOWER

GeneSiC Semiconductor

8,974 -
MUR40005CT

数据表

- Twin Tower Bulk Obsolete 1 Pair Common Cathode Standard 50 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40005CTR

MUR40005CTR

DIODE MODULE GP 50V 200A 2TOWER

GeneSiC Semiconductor

5,106 -
MUR40005CTR

数据表

- Twin Tower Bulk Obsolete 1 Pair Common Anode Standard 50 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MURT10040

MURT10040

DIODE MODULE GP 400V 50A 3TOWER

GeneSiC Semiconductor

4,610 -
MURT10040

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10040R

MURT10040R

DIODE MODULE GP 400V 50A 3TOWER

GeneSiC Semiconductor

5,733 -
MURT10040R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard, Reverse Polarity 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10060

MURT10060

DIODE MODULE GP 600V 50A 3TOWER

GeneSiC Semiconductor

4,834 -
MURT10060

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 50A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10060R

MURT10060R

DIODE MODULE GP 600V 50A 3TOWER

GeneSiC Semiconductor

4,971 -
MURT10060R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard, Reverse Polarity 600 V 50A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSC2X30SDA170J

MSC2X30SDA170J

DIODE MOD SIC 1700V 30A SOT227

Microchip Technology

8,354 -
MSC2X30SDA170J

数据表

- SOT-227-4, miniBLOC Tube Active 2 Independent SiC (Silicon Carbide) Schottky 1700 V 30A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227 (ISOTOP®)
MBR30035CT

MBR30035CT

DIODE MOD SCHOTT 35V 150A 2TOWER

GeneSiC Semiconductor

8,856 -
MBR30035CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 35 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30035CTR

MBR30035CTR

DIODE MOD SCHOTT 35V 150A 2TOWER

GeneSiC Semiconductor

9,220 -
MBR30035CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 35 V 150A 700 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 35 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR300100CT

MBR300100CT

DIODE MOD SCHOT 100V 150A 2TOWER

GeneSiC Semiconductor

9,532 -
MBR300100CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 100 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR300100CTR

MBR300100CTR

DIODE MOD SCHOT 100V 150A 2TOWER

GeneSiC Semiconductor

2,001 -
MBR300100CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 100 V 150A 840 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30020CT

MBR30020CT

DIODE MOD SCHOTT 20V 150A 2TOWER

GeneSiC Semiconductor

3,409 -
MBR30020CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 20 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30020CTR

MBR30020CTR

DIODE MOD SCHOTT 20V 150A 2TOWER

GeneSiC Semiconductor

9,044 -
MBR30020CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 20 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30030CT

MBR30030CT

DIODE MOD SCHOTT 30V 150A 2TOWER

GeneSiC Semiconductor

8,994 -
MBR30030CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 30 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR30030CTR

MBR30030CTR

DIODE MOD SCHOTT 30V 150A 2TOWER

GeneSiC Semiconductor

7,837 -
MBR30030CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 30 V 150A 650 mV @ 150 A Fast Recovery =< 500ns, > 200mA (Io) - 8 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
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