二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MBR60020CTR

MBR60020CTR

DIODE MOD SCHOTT 20V 300A 2TOWER

GeneSiC Semiconductor

4,439 -
MBR60020CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 20 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60030CT

MBR60030CT

DIODE MOD SCHOTT 30V 300A 2TOWER

GeneSiC Semiconductor

3,621 -
MBR60030CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 30 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60030CTR

MBR60030CTR

DIODE MOD SCHOTT 30V 300A 2TOWER

GeneSiC Semiconductor

2,788 -
MBR60030CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 30 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60035CT

MBR60035CT

DIODE MOD SCHOTT 35V 300A 2TOWER

GeneSiC Semiconductor

9,077 -
MBR60035CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 35 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60035CTR

MBR60035CTR

DIODE MOD SCHOTT 35V 300A 2TOWER

GeneSiC Semiconductor

3,022 -
MBR60035CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 35 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60045CT

MBR60045CT

DIODE MOD SCHOTT 45V 300A 2TOWER

GeneSiC Semiconductor

9,881 -
MBR60045CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 45 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60045CTR

MBR60045CTR

DIODE MOD SCHOTT 45V 300A 2TOWER

GeneSiC Semiconductor

6,337 -
MBR60045CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 45 V 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60060CT

MBR60060CT

DIODE MOD SCHOTT 60V 300A 2TOWER

GeneSiC Semiconductor

8,045 -
MBR60060CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 60 V 300A 800 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -50°C ~ 150°C - - Chassis Mount Twin Tower
MBR60060CTR

MBR60060CTR

DIODE MOD SCHOTT 60V 300A 2TOWER

GeneSiC Semiconductor

3,212 -
MBR60060CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 60 V 300A 800 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60080CT

MBR60080CT

DIODE MOD SCHOTT 80V 300A 2TOWER

GeneSiC Semiconductor

5,925 -
MBR60080CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60080CTR

MBR60080CTR

DIODE MOD SCHOTT 80V 300A 2TOWER

GeneSiC Semiconductor

9,992 -
MBR60080CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 80 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR600150CT

MBR600150CT

DIODE MOD SCHOT 150V 300A 2TOWER

GeneSiC Semiconductor

6,184 -
MBR600150CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR600150CTR

MBR600150CTR

DIODE MOD SCHOT 150V 300A 2TOWER

GeneSiC Semiconductor

6,944 -
MBR600150CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR600200CT

MBR600200CT

DIODE MOD SCHOT 200V 300A 2TOWER

GeneSiC Semiconductor

6,168 -
MBR600200CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR600200CTR

MBR600200CTR

DIODE MOD SCHOT 200V 300A 2TOWER

GeneSiC Semiconductor

8,008 -
MBR600200CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
2954882

2954882

DIODE MOD GP 1000V 300MA MOD

Phoenix Contact

3,537 -
2954882

数据表

- Module Bulk Active 8 Common Anode Standard 1000 V 300mA - Standard Recovery >500ns, > 200mA (Io) - - -20°C ~ 50°C - - DIN Rail/Channel Module
2954879

2954879

DIODE MOD GP 1000V 300MA MOD

Phoenix Contact

7,662 -
2954879

数据表

- Module Bulk Active 8 Common Cathode Standard 1000 V 300mA - Standard Recovery >500ns, > 200mA (Io) - - -20°C ~ 50°C - - DIN Rail/Channel Module
JAN1N6843CCU3

JAN1N6843CCU3

DIODE ARRAY SCHOTTKY 100V 15A U3

Microchip Technology

9,699 -
JAN1N6843CCU3

数据表

- 3-SMD, No Lead Bulk Active 1 Pair Common Cathode Schottky 100 V 15A 1.27 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 100 V -65°C ~ 150°C Military MIL-PRF-19500/578 Surface Mount U3 (SMD-0.5)
F1827RD600

F1827RD600

DIODE MODULE GP 600V 25A MODULE

Sensata-Crydom

7,508 -
F1827RD600

数据表

- Module Bulk Not For New Designs 1 Pair Series Connection Standard 600 V 25A (DC) 1.55 V @ 75 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
MURT40040

MURT40040

DIODE MODULE GP 400V 200A 3TOWER

GeneSiC Semiconductor

6,444 -
MURT40040

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 200A 1.35 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
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