二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MUR40010CT

MUR40010CT

DIODE MODULE GP 100V 200A 2TOWER

GeneSiC Semiconductor

7,698 -
MUR40010CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 100 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V - - - Chassis Mount Twin Tower
MUR40010CTR

MUR40010CTR

DIODE MODULE GP 100V 200A 2TOWER

GeneSiC Semiconductor

9,157 -
MUR40010CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Standard 100 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40020CT

MUR40020CT

DIODE MODULE GP 200V 200A 2TOWER

GeneSiC Semiconductor

4,692 -
MUR40020CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 200 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40020CTR

MUR40020CTR

DIODE MODULE GP 200V 200A 2TOWER

GeneSiC Semiconductor

9,990 -
MUR40020CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Standard 200 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40040CT

MUR40040CT

DIODE MODULE GP 400V 200A 2TOWER

GeneSiC Semiconductor

9,872 -
MUR40040CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 400 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40040CTR

MUR40040CTR

DIODE MODULE GP 400V 200A 2TOWER

GeneSiC Semiconductor

9,392 -
MUR40040CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Standard 400 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40060CT

MUR40060CT

DIODE MODULE GP 600V 200A 2TOWER

GeneSiC Semiconductor

7,346 -
MUR40060CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 600 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40060CTR

MUR40060CTR

DIODE MODULE GP 600V 200A 2TOWER

GeneSiC Semiconductor

6,552 -
MUR40060CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Standard 600 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MURT40010

MURT40010

DIODE MODULE GP 100V 200A 3TOWER

GeneSiC Semiconductor

8,723 -
MURT40010

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 100 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40010R

MURT40010R

DIODE MODULE GP 100V 200A 3TOWER

GeneSiC Semiconductor

5,958 -
MURT40010R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 100 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40020

MURT40020

DIODE MODULE GP 200V 200A 3TOWER

GeneSiC Semiconductor

9,622 -
MURT40020

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40020R

MURT40020R

DIODE MODULE GP 200V 200A 3TOWER

GeneSiC Semiconductor

4,236 -
MURT40020R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
APT2X61DC120J

APT2X61DC120J

DIODE MOD SIC 1200V 60A SOT-227

Microchip Technology

6,313 -

-

- SOT-227-4, miniBLOC Bulk Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 60A 1.8 V @ 60 A No Recovery Time > 500mA (Io) 0 ns 1.2 mA @ 1200 V - - - Chassis Mount SOT-227
USD245CRHR2

USD245CRHR2

DIODE ARRAY SCHOTTKY 45V 4A TO39

Microchip Technology

8,860 -
USD245CRHR2

数据表

- TO-205AD, TO-39-3 Metal Can Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 45 V 4A 680 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V -65°C ~ 175°C - - Through Hole TO-39 (TO-205AD)
F1857RD400

F1857RD400

DIODE MODULE GP 400V 55A MODULE

Sensata-Crydom

7,361 -
F1857RD400

数据表

- Module Bulk Obsolete 1 Pair Series Connection Standard 400 V 55A (DC) 1.4 V @ 165 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
F1857RD600

F1857RD600

DIODE MODULE GP 600V 55A MODULE

Sensata-Crydom

8,224 -
F1857RD600

数据表

- Module Bulk Obsolete 1 Pair Series Connection Standard 600 V 55A (DC) 1.4 V @ 165 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
F1827RD1000

F1827RD1000

DIODE MODULE GP 1000V 25A MODULE

Sensata-Crydom

9,037 -
F1827RD1000

数据表

- Module Bulk Obsolete 1 Pair Series Connection Standard 1000 V 25A (DC) 1.55 V @ 75 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
DD98N22KHPSA2

DD98N22KHPSA2

DIODE MODULE GP 2200V 98A MODULE

Infineon Technologies

2,514 -

-

DD98N Module Tray Active 1 Pair Series Connection Standard 2200 V 98A 1.53 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 25 mA @ 2200 V 150°C - - Chassis Mount Module
DD171N16KHPSA1

DD171N16KHPSA1

DIODE MOD GP 1600V 171A MOD

Infineon Technologies

7,461 -
DD171N16KHPSA1

数据表

DD171N Module Tray Obsolete 1 Pair Common Cathode Standard 1600 V 171A 1.26 V @ 500 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount Module
JANTX1N7047CCT3

JANTX1N7047CCT3

DIODE ARR SCHOTT 150V 16A TO-257

Microchip Technology

3,765 -

-

- TO-257-3 Bulk Active 1 Pair Common Cathode Schottky 150 V 16A 1.13 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 150 V -65°C ~ 150°C Military MIL-PRF-19500/737 Through Hole TO-257
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