二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MBRT60060

MBRT60060

DIODE MOD SCHOTT 60V 300A 3TOWER

GeneSiC Semiconductor

5,720 -
MBRT60060

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 60 V 300A 800 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT60060R

MBRT60060R

DIODE MOD SCHOTT 60V 300A 3TOWER

GeneSiC Semiconductor

5,709 -
MBRT60060R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 60 V 300A 800 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT60080

MBRT60080

DIODE MOD SCHOTT 80V 300A 3TOWER

GeneSiC Semiconductor

9,383 -
MBRT60080

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT60080R

MBRT60080R

DIODE MOD SCHOTT 80V 300A 3TOWER

GeneSiC Semiconductor

3,790 -
MBRT60080R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 80 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600150

MBRT600150

DIODE MOD SCHOT 150V 300A 3TOWER

GeneSiC Semiconductor

4,803 -
MBRT600150

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600150R

MBRT600150R

DIODE MOD SCHOT 150V 300A 3TOWER

GeneSiC Semiconductor

2,645 -
MBRT600150R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600200

MBRT600200

DIODE MOD SCHOT 200V 300A 3TOWER

GeneSiC Semiconductor

4,816 -
MBRT600200

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT600200R

MBRT600200R

DIODE MOD SCHOT 200V 300A 3TOWER

GeneSiC Semiconductor

6,147 -
MBRT600200R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
ND411226

ND411226

DIODE MOD GP 1200V 260A POWRBLOK

Powerex Inc.

6,286 -
ND411226

数据表

- POW-R-BLOK™ Module Bulk Discontinued at Digi-Key 1 Pair Series Connection Standard 1200 V 260A 1.35 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 1200 V - - - Chassis Mount POW-R-BLOK™ Module
VS-VSKJ250-16PBF

VS-VSKJ250-16PBF

DIODE MOD GP 1600V 125A MAGNAPAK

Vishay General Semiconductor - Diodes Division

2,988 -
VS-VSKJ250-16PBF

数据表

- 3-MAGN-A-PAK™ Bulk Last Time Buy 1 Pair Common Anode Standard 1600 V 125A - Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount MAGN-A-PAK®
VS-VSKC250-16PBF

VS-VSKC250-16PBF

DIODE MOD GP 1600V 125A INTAPAK

Vishay General Semiconductor - Diodes Division

2,083 -
VS-VSKC250-16PBF

数据表

- INT-A-Pak Bulk Last Time Buy 1 Pair Common Cathode Standard 1600 V 125A - Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount INT-A-PAK
ND411426

ND411426

DIODE MOD GP 1400V 260A POWRBLOK

Powerex Inc.

7,453 -
ND411426

数据表

- POW-R-BLOK™ Module Bulk Discontinued at Digi-Key 1 Pair Series Connection Standard 1400 V 260A 1.35 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 1400 V - - - Chassis Mount POW-R-BLOK™ Module
MDD255-14N1

MDD255-14N1

DIODE MODULE GP 1400V 270A Y1-CU

IXYS

5,016 -
MDD255-14N1

数据表

- Y1-CU Box Active 1 Pair Series Connection Standard 1400 V 270A 1.4 V @ 600 A Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 1400 V -40°C ~ 150°C - - Chassis Mount Y1-CU
F1857CAD600

F1857CAD600

DIODE MODULE GP 600V 55A MODULE

Sensata-Crydom

8,723 -
F1857CAD600

数据表

- Module Bulk Obsolete 1 Pair Common Anode Standard 600 V 55A (DC) 1.4 V @ 165 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
MSRTA200100D

MSRTA200100D

DIODE MODULE GEN PURP 1000V 200A

GeneSiC Semiconductor

2,567 -
MSRTA200100D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 1000 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -55°C ~ 150°C - - Chassis Mount -
MSRTA20080D

MSRTA20080D

DIODE MODULE GEN PURP 800V 200A

GeneSiC Semiconductor

8,666 -
MSRTA20080D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 800 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C - - Chassis Mount -
MSRTA20060D

MSRTA20060D

DIODE MODULE GEN PURP 600V 200A

GeneSiC Semiconductor

9,627 -
MSRTA20060D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C - - Chassis Mount -
MSRTA200120D

MSRTA200120D

DIODE MODULE GEN PURP 1200V 200A

GeneSiC Semiconductor

4,141 -
MSRTA200120D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 1200 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount -
MSRTA200160D

MSRTA200160D

DIODE MODULE GEN PURP 1600V 200A

GeneSiC Semiconductor

5,824 -
MSRTA200160D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 1600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C - - Chassis Mount -
MSRTA200140D

MSRTA200140D

DIODE MODULE GEN PURP 1400V 200A

GeneSiC Semiconductor

6,696 -
MSRTA200140D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 1400 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C - - Chassis Mount -
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