单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RDK85840XX

RDK85840XX

DIODE DISC RD 4000A 5800V

Powerex Inc.

2,318 -

-

* - Bulk Obsolete - - - - - - - - - - - - -
MS1N6674

MS1N6674

DIODE GEN PURP

Microsemi Corporation

3,298 -

-

- TO-254-3, TO-254AA Bulk Active Standard 500 V 15A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 400 V 150pF @ 10V, 1MHz Military MIL-PRF-19500/617 Through Hole TO-254 -
PS415014

PS415014

DIODE GP 5KV 1800A POW-R-BLOK

Powerex Inc.

7,534 -
PS415014

数据表

- POW-R-BLOK™ Module Bulk Discontinued at Digi-Key Standard 5000 V 1800A - Standard Recovery >500ns, > 200mA (Io) 30 µs 400 mA @ 5000 V - - - Chassis Mount POW-R-BLOK™ Module -40°C ~ 150°C
D1481N65TVFXPSA1

D1481N65TVFXPSA1

DIODE GP 6.8KV 2200A D7626K-1

Infineon Technologies

9,775 -
D1481N65TVFXPSA1

数据表

- DO-200AC, K-PUK Tray Active Standard 6800 V 2200A 1.8 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 6800 V - - - Clamp On BG-D7626K-1 160°C (Max)
D2201N45TXPSA1

D2201N45TXPSA1

DIODE GEN PURP 4.5KV 3250A

Infineon Technologies

8,277 -
D2201N45TXPSA1

数据表

- DO-200AD Tray Active Standard 4500 V 3250A 1.2 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4500 V - - - Chassis Mount - -40°C ~ 140°C
M2325HA400

M2325HA400

DIODE GEN PURP 4KV 2325A W121

IXYS

2,060 -
M2325HA400

数据表

- DO-200AD Box Active Standard 4000 V 2325A 2.6 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) 5.4 µs 150 mA @ 4000 V - - - Chassis Mount W121 -40°C ~ 150°C
D471N90TXPSA1

D471N90TXPSA1

DIODE GEN PURP 9KV 760A

Infineon Technologies

7,467 -
D471N90TXPSA1

数据表

- DO-200AB, B-PUK Tray Active Standard 9000 V 760A 3.2 V @ 1200 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 9000 V - - - Clamp On - -40°C ~ 160°C
W2865HA680

W2865HA680

DIODE GEN PURP 6.8KV 4825A W121

IXYS

5,158 -
W2865HA680

数据表

- DO-200AD Box Active Standard 6800 V 4825A 4.04 V @ 10000 A Standard Recovery >500ns, > 200mA (Io) 53 µs 100 mA @ 6800 V - - - Chassis Mount W121 -40°C ~ 150°C
M2325HA450

M2325HA450

DIODE GEN PURP 4.5KV 2325A W121

IXYS

9,387 -
M2325HA450

数据表

- DO-200AD Box Active Standard 4500 V 2325A 2.6 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) 5.4 µs 150 mA @ 4500 V - - - Chassis Mount W121 -40°C ~ 150°C
JAN1N6676T1

JAN1N6676T1

RECTIFIER

Microsemi Corporation

5,462 -

-

- - Bulk Active - - - - - - - - Military MIL-PRF-19500/538 - - -
W2865HA720

W2865HA720

DIODE GEN PURP 7200V 4825A W121

IXYS

5,150 -
W2865HA720

数据表

- DO-200AD Box Active Standard 7200 V 4825A 4.04 V @ 10000 A Standard Recovery >500ns, > 200mA (Io) 53 µs 100 mA @ 7200 V - - - Chassis Mount W121 -40°C ~ 150°C
JANS1N5816R

JANS1N5816R

DIODE GEN PURP 150V 20A DO203AA

Microchip Technology

7,365 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 150 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 300pF @ 10V, 1MHz Military MIL-PRF-19500/478 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANS1N5812

JANS1N5812

DIODE GEN PURP 50V 20A DO203AA

Microchip Technology

3,373 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard 50 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 300pF @ 10V, 1MHz Military MIL-PRF-19500/478 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANS1N5814

JANS1N5814

DIODE GEN PURP 100V 20A DO203AA

Microchip Technology

8,773 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard 100 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 300pF @ 10V, 1MHz Military MIL-PRF-19500/478 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
D8320N04TVFXPSA1

D8320N04TVFXPSA1

DIODE GEN PURP 400V 8320A

Infineon Technologies

7,748 -
D8320N04TVFXPSA1

数据表

- DO-200AD Tray Obsolete Standard 400 V 8320A 795 mV @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 400 V - - - Chassis Mount - -25°C ~ 150°C
JANS1N5812R

JANS1N5812R

DIODE GEN PURP 50V 20A DO203AA

Microchip Technology

2,418 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 50 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 300pF @ 10V, 1MHz Military MIL-PRF-19500/478 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANS1N5814R

JANS1N5814R

DIODE GEN PURP 100V 20A DO203AA

Microchip Technology

2,848 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 300pF @ 10V, 1MHz Military MIL-PRF-19500/478 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
D4810N28TVFXPSA1

D4810N28TVFXPSA1

DIODE GEN PURP 2.8KV 4810A

Infineon Technologies

4,987 -
D4810N28TVFXPSA1

数据表

- DO-200AE Tray Active Standard 2800 V 4810A 1.078 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 200 mA @ 2800 V - - - Chassis Mount - -40°C ~ 150°C
JANTX1N6676T1

JANTX1N6676T1

RECTIFIER

Microsemi Corporation

6,392 -

-

- - Bulk Active - - - - - - - - Military MIL-PRF-19500/610 - - -
W108CED180

W108CED180

DIODE GEN PURP 1.8KV 10815A W112

IXYS

6,999 -
W108CED180

数据表

- DO-200AE Box Active Standard 1800 V 10815A - Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis Mount W112 -
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