单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
W108CED220

W108CED220

DIODE GEN PURP 2.2KV 10815A W112

IXYS

5,818 -
W108CED220

数据表

- DO-200AE Box Active Standard 2200 V 10815A - Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis Mount W112 -
W7395ED450

W7395ED450

DIODE GEN PURP 2.7KV 7395A W112

IXYS

6,093 -

-

- DO-200AE Box Active Standard 2700 V 7395A 1.4 V @ 7000 A Standard Recovery >500ns, > 200mA (Io) 69 µs 120 mA @ 2700 V - - - Chassis Mount W112 -40°C ~ 160°C
DZ950N44KS02HPSA1

DZ950N44KS02HPSA1

DIODE GEN PURP 4.4KV 950A PB70-1

Infineon Technologies

3,012 -
DZ950N44KS02HPSA1

数据表

- Module Tray Active Standard 4400 V 950A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4400 V - - - Chassis Mount BG-PB70-1 160°C (Max)
E1250HC45E

E1250HC45E

DIODE GEN PURP 4.5KV 1355A W122

IXYS

2,783 -
E1250HC45E

数据表

- DO-200AD Box Active Standard 4500 V 1355A 2.07 V @ 1250 A Standard Recovery >500ns, > 200mA (Io) 1.2 µs 1 mA @ 4500 V - - - Chassis Mount W122 -
W7395ED480

W7395ED480

DIODE GEN PURP 2.88KV 7395A W112

IXYS

2,880 -

-

- DO-200AE Box Active Standard 2880 V 7395A 1.4 V @ 7000 A Standard Recovery >500ns, > 200mA (Io) 69 µs 120 mA @ 2880 V - - - Chassis Mount W112 -40°C ~ 160°C
W6360EC600

W6360EC600

DIODE GEN PURP 6KV 6395A W111

IXYS

4,051 -
W6360EC600

数据表

- DO-200AE Box Active Standard 6000 V 6395A 1.4 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) 73 µs 120 mA @ 6000 V - - - Chassis Mount W111 -40°C ~ 150°C
D921S45TXPSA1

D921S45TXPSA1

DIODE GEN PURP 4.5KV 1630A

Infineon Technologies

9,616 -
D921S45TXPSA1

数据表

- DO-200AD Tray Active Standard 4500 V 1630A 2.6 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4500 V - - - Chassis Mount - -40°C ~ 140°C
W5715ED600

W5715ED600

DIODE GEN PURP 6KV 5750A W112

IXYS

9,925 -
W5715ED600

数据表

- DO-200AE Box Active Standard 6000 V 5750A 1.4 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) 73 µs 120 mA @ 6000 V - - - Chassis Mount W112 -40°C ~ 150°C
E2400EC45E

E2400EC45E

DIODE GEN PURP 4.5KV 2490A W111

IXYS

2,780 -
E2400EC45E

数据表

- DO-200AE Box Active Standard 4500 V 2490A 3.65 V @ 2400 A Standard Recovery >500ns, > 200mA (Io) 1.22 µs 100 mA @ 4500 V - - - Chassis Mount W111 -40°C ~ 140°C
D1031SH45TXPSA1

D1031SH45TXPSA1

DIODE GEN PURP 4.5KV 1450A

Infineon Technologies

6,126 -
D1031SH45TXPSA1

数据表

- DO-200AD Tray Active Standard 4500 V 1450A 4.2 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4500 V - - - Chassis Mount - 0°C ~ 140°C
D931SH65TXPSA1

D931SH65TXPSA1

DIODE GEN PURP 6.5KV 1220A

Infineon Technologies

4,291 -
D931SH65TXPSA1

数据表

- DO-200AD Tray Active Standard 6500 V 1220A 5.6 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 6500 V - - - Chassis Mount - 0°C ~ 140°C
E3000EC45E

E3000EC45E

DIODE GEN PURP 4.5KV 3410A W111

IXYS

9,075 -
E3000EC45E

数据表

- DO-200AE Box Active Standard 4500 V 3410A 3.1 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 1.25 µs 90 mA @ 4500 V - - - Chassis Mount W111 -40°C ~ 140°C
D1251S45TXPSA1

D1251S45TXPSA1

DIODE GEN PURP 4.5KV 1530A

Infineon Technologies

6,504 -
D1251S45TXPSA1

数据表

- DO-200AC, K-PUK Tray Active Standard 4500 V 1530A 2.5 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 80 mA @ 4500 V - - - Clamp On - -40°C ~ 140°C
MS1N6392

MS1N6392

POWER SCHOTTKY

Microchip Technology

3,295 -

-

- - Bulk Active - - - - - - - - - - - - -
MS1N6392/TR

MS1N6392/TR

POWER SCHOTTKY

Microchip Technology

2,963 -

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
D1381S45TXPSA1

D1381S45TXPSA1

DIODE GEN PURP 4.5KV 1630A

Infineon Technologies

2,933 -
D1381S45TXPSA1

数据表

- DO-200AD Tray Active Standard 4500 V 1630A 2.6 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4500 V - - - Chassis Mount - -40°C ~ 140°C
D4201N22TXPSA1

D4201N22TXPSA1

DIODE GEN PURP 2.2KV 6010A

Infineon Technologies

3,774 -
D4201N22TXPSA1

数据表

- DO-200AE Tray Active Standard 2200 V 6010A 1 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 200 mA @ 2200 V - - - Chassis Mount - -40°C ~ 160°C
E1780TG65E

E1780TG65E

DIODE GEN PURP 3.6KV 1780A -

IXYS

8,071 -

-

SONIC-FRD™ TO-200AF Box Active Standard 3600 V 1780A 3.83 V @ 1780 A Standard Recovery >500ns, > 200mA (Io) 1.22 µs 100 mA @ 3600 V - - - Chassis Mount - -40°C ~ 140°C
D1461S45TXPSA1

D1461S45TXPSA1

DIODE GEN PURP 1720A D10026K-1

Infineon Technologies

3,036 -
D1461S45TXPSA1

数据表

- DO-200, Variant Tray Active Standard - 1720A - Standard Recovery >500ns, > 200mA (Io) - 200 mA @ 4500 V - - - Chassis Mount BG-D10026K-1 -40°C ~ 140°C
D3041N65TXPSA1

D3041N65TXPSA1

DIODE GEN PURP 6.5KV 4090A

Infineon Technologies

4,966 -
D3041N65TXPSA1

数据表

- DO-200AE Tray Active Standard 6500 V 4090A 1.7 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 6500 V - - - Chassis Mount - -40°C ~ 160°C
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