单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N5816

JANS1N5816

DIODE SCHOTTKY 150V 20A DO203AA

Microchip Technology

5,723 -
JANS1N5816

数据表

- DO-203AA, DO-4, Stud Bulk Discontinued at Digi-Key Schottky 150 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 300pF @ 10V, 1MHz Military MIL-PRF-19500/478 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
D3001N68TXPSA1

D3001N68TXPSA1

DIODE GEN PURP 6.8KV 3910A

Infineon Technologies

3,717 -
D3001N68TXPSA1

数据表

- DO-200AE Tray Active Standard 6800 V 3910A 1.7 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 6800 V - - - Chassis Mount - -40°C ~ 160°C
D2601N85TXPSA1

D2601N85TXPSA1

DIODE GEN PURP 8.5KV 3040A

Infineon Technologies

7,416 -
D2601N85TXPSA1

数据表

- DO-200AE Tray Active Standard 8500 V 3040A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 8500 V - - - Chassis Mount - -40°C ~ 160°C
D2601N90TXPSA1

D2601N90TXPSA1

DIODE GEN PURP 9KV 3040A

Infineon Technologies

7,931 -
D2601N90TXPSA1

数据表

- DO-200AE Tray Active Standard 9000 V 3040A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 9000 V - - - Chassis Mount - -40°C ~ 160°C
D3501N42TVFXPSA1

D3501N42TVFXPSA1

DIODE GP 4.2KV 4870A D12035K-1

Infineon Technologies

7,405 -

-

- DO-200AE Tray Active Standard 4200 V 4870A - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4200 V - - - Chassis Mount BG-D12035K-1 160°C (Max)
D1961SH45TXPSA1

D1961SH45TXPSA1

DIODE GEN PURP 4.5KV 2380A

Infineon Technologies

3,234 -
D1961SH45TXPSA1

数据表

- DO-200AE Tray Active Standard 4500 V 2380A 2.5 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 4500 V - - - Chassis Mount - 0°C ~ 140°C
HBL2010BRP

HBL2010BRP

1 CHANNEL ESD PROTECTOR

onsemi

7,956 -

-

* - Bulk Obsolete - - - - - - - - - - - - -
D1721NH90TAOSA1

D1721NH90TAOSA1

DIODE GEN PURP 2160A D10026K-1

Infineon Technologies

4,076 -
D1721NH90TAOSA1

数据表

- DO-200, Variant Tray Not For New Designs Standard - 2160A - Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 9000 V - - - Chassis Mount BG-D10026K-1 0°C ~ 140°C
D6001N50TXPSA1

D6001N50TXPSA1

DIODE GEN PURP 5KV 8010A

Infineon Technologies

2,515 -
D6001N50TXPSA1

数据表

- DO-200AE Tray Active Standard 5000 V 8010A 1.3 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 400 mA @ 5000 V - - - Chassis Mount - -40°C ~ 160°C
FR304-T

FR304-T

DIODE GEN PURP 400V 3A DO201AD

Diodes Incorporated

6,347 -
FR304-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 400 V 3A 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 400 V - - - Through Hole DO-201AD -65°C ~ 175°C
1N5401-T

1N5401-T

DIODE GEN PURP 100V 3A DO201AD

Diodes Incorporated

6,192 -
1N5401-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 100 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5402-T

1N5402-T

DIODE GEN PURP 200V 3A DO201AD

Diodes Incorporated

9,918 -
1N5402-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 200 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5404-T

1N5404-T

DIODE GEN PURP 400V 3A DO201AD

Diodes Incorporated

5,015 -
1N5404-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 400 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5406-T

1N5406-T

DIODE GEN PURP 600V 3A DO201AD

Diodes Incorporated

9,320 -
1N5406-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 600 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5407-T

1N5407-T

DIODE GEN PURP 800V 3A DO201AD

Diodes Incorporated

5,556 -
1N5407-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 800 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
1N5408-T

1N5408-T

DIODE GEN PURP 1KV 3A DO201AD

Diodes Incorporated

5,822 -
1N5408-T

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 1000 V 3A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
VS-1N3209

VS-1N3209

DIODE GEN PURP 100V 15A DO203AB

Vishay General Semiconductor - Diodes Division

2,442 -
VS-1N3209

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
VS-1N3210

VS-1N3210

DIODE GEN PURP 200V 15A DO203AB

Vishay General Semiconductor - Diodes Division

8,745 -
VS-1N3210

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 200 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
VS-1N2133RA

VS-1N2133RA

DIODE GEN PURP 300V 60A DO203AB

Vishay General Semiconductor - Diodes Division

2,400 -
VS-1N2133RA

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 300 V 60A 1.3 V @ 188 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 300 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
VS-1N2135RA

VS-1N2135RA

DIODE GEN PURP 400V 60A DO203AB

Vishay General Semiconductor - Diodes Division

7,763 -
VS-1N2135RA

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 60A 1.3 V @ 188 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
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