单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RFNL10TJ6SGC9

RFNL10TJ6SGC9

DIODE GP 600V 10A TO220ACFP

Rohm Semiconductor

939 -
RFNL10TJ6SGC9

数据表

- TO-220-2 Tube Active Standard 600 V 10A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C (Max)
IDP30E65D2XKSA1

IDP30E65D2XKSA1

DIODE GP 650V 60A TO220-2-1

Infineon Technologies

534 -
IDP30E65D2XKSA1

数据表

- TO-220-2 Tube Active Standard 650 V 60A 2.2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 40 µA @ 650 V - - - Through Hole PG-TO220-2-1 -40°C ~ 175°C
BYV28-150-TAP

BYV28-150-TAP

DIODE AVALANCHE 150V 3.5A SOD64

Vishay General Semiconductor - Diodes Division

10,975 -
BYV28-150-TAP

数据表

- SOD-64, Axial Cut Tape (CT) Active Avalanche 150 V 3.5A 1.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - - - Through Hole SOD-64 -55°C ~ 175°C
RFN3BM2SFHTL

RFN3BM2SFHTL

DIODE GEN PURP 200V 3A TO252

Rohm Semiconductor

4,800 -
RFN3BM2SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 200 V 3A 980 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 200 V - Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
STTH806DTI

STTH806DTI

DIODE GP 600V 8A TO220AC INS

STMicroelectronics

1,666 -
STTH806DTI

数据表

- TO-220-2 Insulated, TO-220AC Tube Active Standard 600 V 8A 3.6 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - - - Through Hole TO-220AC ins 175°C (Max)
MBR10U100HHE3-TP

MBR10U100HHE3-TP

DIODE SCHOTTKY 100V 10A TO277

Micro Commercial Co

2,216 -
MBR10U100HHE3-TP

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 10A 850 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 100 V 320pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277 -55°C ~ 175°C
MUR3060B-BP

MUR3060B-BP

DIODE GEN PURP 600V 30A TO247AD

Micro Commercial Co

1,739 -
MUR3060B-BP

数据表

- TO-247-2 Tube Not For New Designs Standard 600 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
SRAS2040

SRAS2040

DIODE SCHOTTKY 40V 20A TO263AB

Taiwan Semiconductor Corporation

1,057 -
SRAS2040

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 40 V 20A 570 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - - - Surface Mount TO-263AB (D2PAK) -
DST10100S-A

DST10100S-A

DIODE SCHOTTKY 100V 10A TO277B

Littelfuse Inc.

45,415 -
DST10100S-A

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 10A 700 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-277B -55°C ~ 150°C
DST1550S

DST1550S

DIODE SCHOTTKY 50V 15A TO277B

Littelfuse Inc.

19,701 -
DST1550S

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 50 V 15A 560 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 50 V - - - Surface Mount TO-277B -55°C ~ 150°C
RFNL20TJ6SGC9

RFNL20TJ6SGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

1,205 -
RFNL20TJ6SGC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C (Max)
IDP15E65D2XKSA1

IDP15E65D2XKSA1

DIODE GEN PURP 650V 15A TO220

Infineon Technologies

147 -
IDP15E65D2XKSA1

数据表

- TO-220-2 Tube Active Standard 650 V 15A 2.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 47 ns 40 µA @ 650 V - - - Through Hole TO-220 -40°C ~ 175°C
VS-15ETL06FP-N3

VS-15ETL06FP-N3

DIODE GP 600V 15A TO220-2FP

Vishay General Semiconductor - Diodes Division

4,863 -
VS-15ETL06FP-N3

数据表

FRED Pt® TO-220-2 Full Pack Tube Active Standard 600 V 15A 2.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 29 ns 50 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220-2 Full Pack -65°C ~ 175°C
VS-15ETH03SHM3

VS-15ETH03SHM3

DIODE GEN PURP 300V 15A TO263AB

Vishay General Semiconductor - Diodes Division

1,304 -
VS-15ETH03SHM3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 300 V 15A 1.25 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 40 µA @ 300 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
PDS540Q-13

PDS540Q-13

DIODE SCHOTTKY 40V 5A POWERDI5

Diodes Incorporated

4,218 -
PDS540Q-13

数据表

- PowerDI™ 5 Tape & Reel (TR) Active Schottky 40 V 5A 520 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 40 V - Automotive AEC-Q101 Surface Mount PowerDI™ 5 -65°C ~ 150°C
STTH1502DI

STTH1502DI

DIODE GP 200V 15A TO220AC INS

STMicroelectronics

929 -
STTH1502DI

数据表

- TO-220-2 Insulated, TO-220AC Tube Active Standard 200 V 15A 1.1 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 36 ns 10 µA @ 200 V - - - Through Hole TO-220AC ins 175°C (Max)
VB30100S-E3/4W

VB30100S-E3/4W

DIODE SCHOTTKY 100V 30A TO263AB

Vishay General Semiconductor - Diodes Division

173 -
VB30100S-E3/4W

数据表

TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 100 V 30A 910 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
STPS30M100SFP

STPS30M100SFP

DIODE SCHOTT 100V 30A TO220FPAB

STMicroelectronics

1,400 -
STPS30M100SFP

数据表

- TO-220-3 Full Pack Tube Active Schottky 100 V 30A 800 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 175 µA @ 100 V - - - Through Hole TO-220FPAB 150°C (Max)
VS-HFA25TB60S-M3

VS-HFA25TB60S-M3

DIODE GEN PURP 600V 25A TO263AB

Vishay General Semiconductor - Diodes Division

6,699 -
VS-HFA25TB60S-M3

数据表

HEXFRED® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 25A 2 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 20 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
DPG10I200PA

DPG10I200PA

DIODE GEN PURP 200V 10A TO220AC

IXYS

204 -
DPG10I200PA

数据表

HiPerFRED™ TO-220-2 Tube Active Standard 200 V 10A 1.27 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 200 V - - - Through Hole TO-220AC -55°C ~ 175°C
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