单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-35EPF12LHM3

VS-35EPF12LHM3

DIODE GEN PURP 1.2KV 35A TO247AD

Vishay General Semiconductor - Diodes Division

169 -
VS-35EPF12LHM3

数据表

- TO-247-2 Tube Active Standard 1200 V 35A 1.47 V @ 35 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
MSC010SDA120B

MSC010SDA120B

DIODE SIL CARB 1.2KV 10A TO247

Microchip Technology

1,511 -
MSC010SDA120B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
JAN1N5552

JAN1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

152 -
JAN1N5552

数据表

- B, Axial Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
SCS210AGC17

SCS210AGC17

DIODE SIC 650V 10A TO220ACFP

Rohm Semiconductor

1,918 -
SCS210AGC17

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 365pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
STTH3006PI

STTH3006PI

DIODE GEN PURP 600V 30A DOP3I

STMicroelectronics

444 -
STTH3006PI

数据表

- DOP3I-2 Insulated (Straight Leads) Tube Active Standard 600 V 30A 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - - - Through Hole DOP3I 175°C (Max)
VS-E5PH6012LHN3

VS-E5PH6012LHN3

DIODE GEN PURP 1.2KV 60A TO247AD

Vishay General Semiconductor - Diodes Division

334 -
VS-E5PH6012LHN3

数据表

- TO-247-2 Tube Active Standard 1200 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 50 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-E5PH6012L-N3

VS-E5PH6012L-N3

DIODE GEN PURP 1.2KV 60A TO247AD

Vishay General Semiconductor - Diodes Division

113 -
VS-E5PH6012L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 1200 V 60A 2.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
S4D08120E

S4D08120E

DIODE SIL CARBIDE 1.2KV 8A DPAK

SMC Diode Solutions

2,606 -
S4D08120E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 1200 V 560pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
SCS206AGC17

SCS206AGC17

DIODE SIL CARB 650V 6A TO220ACFP

Rohm Semiconductor

638 -
SCS206AGC17

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
VS-E5PX6012L-N3

VS-E5PX6012L-N3

DIODE GEN PURP 1.2KV 60A TO247AD

Vishay General Semiconductor - Diodes Division

165 -
VS-E5PX6012L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 1200 V 60A 3.15 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
1N5619

1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

301 -
1N5619

数据表

- A, Axial Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
VS-40EPS08-M3

VS-40EPS08-M3

DIODE GP 800V 40A TO247AC

Vishay General Semiconductor - Diodes Division

678 -
VS-40EPS08-M3

数据表

- TO-247-2 Tube Active Standard 800 V 40A 1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 800 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-65PQ015-N3

VS-65PQ015-N3

DIODE SCHOTTKY 15V 65A TO247AC

Vishay General Semiconductor - Diodes Division

103 -
VS-65PQ015-N3

数据表

- TO-247-3 Tube Active Schottky 15 V 65A 500 mV @ 65 A Fast Recovery =< 500ns, > 200mA (Io) - 18 mA @ 15 V - - - Through Hole TO-247AC -55°C ~ 125°C
VS-E5PH7512L-N3

VS-E5PH7512L-N3

DIODE GEN PURP 1.2KV 75A TO247AD

Vishay General Semiconductor - Diodes Division

3,490 -
VS-E5PH7512L-N3

数据表

FRED Pt® Gen 5 TO-247-2 Tube Active Standard 1200 V 75A 2.6 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 145 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
RRD20TJ10SGC9

RRD20TJ10SGC9

DIODE GEN PURP 1KV 20A TO220ACFP

Rohm Semiconductor

219 -
RRD20TJ10SGC9

数据表

- TO-220-2 Full Pack Tube Active Standard 1000 V 20A 1.05 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - - - Through Hole TO-220ACFP 150°C
C3D06065E

C3D06065E

DIODE SIL CARB 650V 20A TO252-2

Wolfspeed, Inc.

1,387 -
C3D06065E

数据表

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Not For New Designs SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 295pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
IDH08SG60CXKSA2

IDH08SG60CXKSA2

DIODE SIL CARB 600V 8A TO220-2-1

Infineon Technologies

1,662 -
IDH08SG60CXKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-30EPF12-M3

VS-30EPF12-M3

DIODE GP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

443 -
VS-30EPF12-M3

数据表

- TO-247-2 Tube Active Standard 1200 V 30A 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-30EPF06-M3

VS-30EPF06-M3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

500 -
VS-30EPF06-M3

数据表

- TO-247-2 Tube Active Standard 600 V 30A 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 600 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
C6D10065G-TR

C6D10065G-TR

DIODE SIL CARB 650V 36A TO263-2

Wolfspeed, Inc.

1,525 -
C6D10065G-TR

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 36A 1.4 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 611pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
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