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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
STPSC20065D

STPSC20065D

DIODE SIL CARB 650V 20A TO220AC

STMicroelectronics

975 -
STPSC20065D

数据表

ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 650 V 1250pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
IDH16G65C5XKSA2

IDH16G65C5XKSA2

DIODE SIL CARB 650V 16A TO220-1

Infineon Technologies

1,984 -
IDH16G65C5XKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-1N3890R

VS-1N3890R

DIODE GEN PURP 100V 12A DO203AA

Vishay General Semiconductor - Diodes Division

181 -
VS-1N3890R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
1N5553

1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology

251 -
1N5553

数据表

- B, Axial Bulk Active Standard 800 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - - - Through Hole B, Axial -65°C ~ 175°C
FFSD10120A

FFSD10120A

DIODE SIL CARBIDE 1.2KV TO252AA

onsemi

1,706 -
FFSD10120A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V - 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 612pF @ 1V, 100kHz - - Surface Mount TO-252AA -
1N5551US

1N5551US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

165 -
1N5551US

数据表

- SQ-MELF, E Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - - - Surface Mount D-5B -65°C ~ 175°C
IDH12SG60CXKSA2

IDH12SG60CXKSA2

DIODE SIL CARB 600V 12A TO220-1

Infineon Technologies

396 -
IDH12SG60CXKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 12A 2.1 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 310pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-3C20ET07T-M3

VS-3C20ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

788 -
VS-3C20ET07T-M3

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 845pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
STPSC20065DI

STPSC20065DI

DIODE SIC 650V 20A TO220AC INS

STMicroelectronics

599 -
STPSC20065DI

数据表

ECOPACK®2 TO-220-2 Insulated, TO-220AC Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 650 V 1250pF @ 0V, 1MHz - - Through Hole TO-220AC ins -40°C ~ 175°C
MSC030SDA070B

MSC030SDA070B

DIODE SIL CARBIDE 700V 60A TO247

Microchip Technology

118 -
MSC030SDA070B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 60A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V 1200pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
DSP45-18A

DSP45-18A

DIODE GEN PURP 1.8KV 45A TO247

IXYS

5,823 -
DSP45-18A

数据表

- TO-247-3 Tube Active Standard 1800 V 45A 1.26 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1800 V 18pF @ 400V, 1MHz - - Through Hole TO-247 (IXTH) -40°C ~ 175°C
FFSP3065B

FFSP3065B

DIODE SIL CARB 650V 30A TO220-2

onsemi

1,216 -
FFSP3065B

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1280pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-40EPF02-M3

VS-40EPF02-M3

DIODE GP 200V 40A TO247AC

Vishay General Semiconductor - Diodes Division

466 -
VS-40EPF02-M3

数据表

- TO-247-2 Tube Active Standard 200 V 40A 1.25 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
IDH16G120C5XKSA1

IDH16G120C5XKSA1

DIODE SIL CARB 1.2KV 16A TO220-1

Infineon Technologies

243 -
IDH16G120C5XKSA1

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 16A 1.95 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 730pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
C3D16065A

C3D16065A

DIODE SIL CARB 650V 39A TO220-2

Wolfspeed, Inc.

1,048 -
C3D16065A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 39A 1.8 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 95 µA @ 650 V 878pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-80APS08-M3

VS-80APS08-M3

DIODE GEN PURP 800V 80A TO247AC

Vishay General Semiconductor - Diodes Division

1,237 -
VS-80APS08-M3

数据表

- TO-247-3 Tube Active Standard 800 V 80A 1.17 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 800 V - - - Through Hole TO-247AC -40°C ~ 150°C
DSEI60-10A

DSEI60-10A

DIODE GEN PURP 1KV 60A TO247AD

IXYS

287 -
DSEI60-10A

数据表

- TO-247-2 Tube Active Standard 1000 V 60A 2.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 3 mA @ 1000 V - - - Through Hole TO-247AD -40°C ~ 150°C
S4D20120H

S4D20120H

DIODE SIL CARB 1.2KV 20A TO247AC

SMC Diode Solutions

300 -
S4D20120H

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 721pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
IDK16G120C5XTMA1

IDK16G120C5XTMA1

DIODE SIL CARB 1.2KV 40A TO263-1

Infineon Technologies

437 -
IDK16G120C5XTMA1

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 40A 1.95 V @ 16 A No Recovery Time > 500mA (Io) - 80 µA @ 1200 V 730pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
SCS215AJTLL

SCS215AJTLL

DIODE SIL CARB 650V 15A TO263AB

Rohm Semiconductor

3,996 -
SCS215AJTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz - - Surface Mount TO-263AB 175°C (Max)
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