单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
STPSC6H065DLF

STPSC6H065DLF

DIODE SIL CARB 650V 6A POWERFLAT

STMicroelectronics

10,686 -
STPSC6H065DLF

数据表

ECOPACK®2 8-PowerVDFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 350pF @ 0V, 1MHz - - Surface Mount PowerFlat™ (8x8) HV -40°C ~ 175°C
VS-60EPU06L-N3

VS-60EPU06L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

168 -
VS-60EPU06L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
STTH1512W

STTH1512W

DIODE GEN PURP 1.2KV 15A DO247

STMicroelectronics

380 -
STTH1512W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 1200 V 15A 2.1 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 15 µA @ 1200 V - - - Through Hole DO-247 175°C (Max)
VS-20ETF06SLHM3

VS-20ETF06SLHM3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

5,516 -
VS-20ETF06SLHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 20A 1.67 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-E5TH3012S2L-M3

VS-E5TH3012S2L-M3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,046 -
VS-E5TH3012S2L-M3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
STTH30R06PI

STTH30R06PI

DIODE GEN PURP 600V 30A DOP3I

STMicroelectronics

2,646 -
STTH30R06PI

数据表

- DOP3I-2 Insulated (Straight Leads) Tube Active Standard 600 V 30A 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - - - Through Hole DOP3I 175°C (Max)
VS-8EWS16STR-M3

VS-8EWS16STR-M3

DIODE GEN PURP 1.6KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

3,778 -
VS-8EWS16STR-M3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-E5TH3012S2LHM3

VS-E5TH3012S2LHM3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

176 -
VS-E5TH3012S2LHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-3C04ET07S2L-M3

VS-3C04ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

1,518 -
VS-3C04ET07S2L-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 175pF @ 1V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
DHG10I1200PM

DHG10I1200PM

DIODE GP 1.2KV 10A TO220ACFP

IXYS

190 -
DHG10I1200PM

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 1200 V 10A 2.69 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 15 µA @ 1200 V - - - Through Hole TO-220ACFP -55°C ~ 150°C
STTH3012WL

STTH3012WL

DIODE GP 1.2KV 30A DO247 LL

STMicroelectronics

569 -
STTH3012WL

数据表

- TO-247-2 Tube Active Standard 1200 V 30A 2.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1200 V - - - Through Hole DO-247 LL 175°C
MSC010SDA070B

MSC010SDA070B

DIODE SIL CARBIDE 700V 24A TO247

Microchip Technology

122 -
MSC010SDA070B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 24A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V 353pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
C3D06060G-TR

C3D06060G-TR

DIODE SIL CARB 600V 19A TO263-2

Wolfspeed, Inc.

4,800 -
C3D06060G-TR

数据表

Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 19A 1.7 V @ 6 A No Recovery Time > 500mA (Io) - 50 µA @ 600 V 295pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
DSI30-08AS-TRL

DSI30-08AS-TRL

DIODE GEN PURP 800V 30A TO263AA

IXYS

2,782 -
DSI30-08AS-TRL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 800 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
IDW40E65D2FKSA1

IDW40E65D2FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

2,289 -
IDW40E65D2FKSA1

数据表

- TO-247-3 Tube Active Standard 650 V 80A 2.3 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
S4D05120E

S4D05120E

DIODE SIL CARBIDE 1.2KV 5A DPAK

SMC Diode Solutions

2,432 -
S4D05120E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
STPSC8H065B-TR

STPSC8H065B-TR

DIODE SIL CARBIDE 650V 8A DPAK

STMicroelectronics

13,754 -
STPSC8H065B-TR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 414pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
VS-20ETF12THM3

VS-20ETF12THM3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division

848 -
VS-20ETF12THM3

数据表

- TO-220-2 Tube Active Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 150°C
C6D06065G-TR

C6D06065G-TR

DIODE SIL CARB 650V 23A TO263-2

Wolfspeed, Inc.

2,423 -
C6D06065G-TR

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 23A 1.4 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 393pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
C6D06065Q-TR

C6D06065Q-TR

DIODE SIL CARBIDE 650V 21A 4QFN

Wolfspeed, Inc.

2,173 -
C6D06065Q-TR

数据表

- 4-PowerVQFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 21A 1.5 V @ 6 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 393pF @ 0V, 1MHz - - Surface Mount 4-QFN (8x8) -55°C ~ 175°C
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户