单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
S4D10120A

S4D10120A

DIODE SIL CARB 1.2KV 10A TO220AC

SMC Diode Solutions

260 -
S4D10120A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 772pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
VS-3C10ET07S2L-M3

VS-3C10ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

2,345 -
VS-3C10ET07S2L-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 445pF @ 1V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
FFSP08120A

FFSP08120A

DIODE SIL CARB 1.2KV 8A TO220-2L

onsemi

365 -
FFSP08120A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 1200 V 538pF @ 1V, 100kHz - - Through Hole TO-220-2L -55°C ~ 175°C
GP3D030A065B

GP3D030A065B

DIODE SIL CARB 650V 30A TO247-2

SemiQ

142 -
GP3D030A065B

数据表

Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.65 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 75 µA @ 650 V 1247pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
UJ3D06530TS

UJ3D06530TS

DIODE SIL CARB 650V 30A TO220-2

Qorvo

7,715 -
UJ3D06530TS

数据表

Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 370 µA @ 650 V 990pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
STTH30RQ06L2-TR

STTH30RQ06L2-TR

DIODE GEN PURP 600V 30A HU3PAK

STMicroelectronics

600 -
STTH30RQ06L2-TR

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active Standard 600 V 30A 2.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 40 µA @ 600 V - - - Surface Mount HU3PAK 175°C
SCS220AGC17

SCS220AGC17

DIODE SIC 650V 20A TO220ACFP

Rohm Semiconductor

706 -
SCS220AGC17

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
DSEI36-06AS-TRL

DSEI36-06AS-TRL

DIODE GEN PURP 600V 37A TO263AA

IXYS

2,069 -
DSEI36-06AS-TRL

数据表

FRED TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 37A 1.6 V @ 37 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - - - Surface Mount TO-263AA -40°C ~ 150°C
1N3595UR-1

1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

624 -
1N3595UR-1

数据表

- DO-213AA Bulk Active Standard 125 V 150mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Surface Mount DO-213AA -65°C ~ 175°C
IDH10SG60CXKSA2

IDH10SG60CXKSA2

DIODE SIL CARB 600V 10A TO220-1

Infineon Technologies

330 -
IDH10SG60CXKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 10A 2.1 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 600 V 290pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
SIC1060PL8-TP

SIC1060PL8-TP

DIODE SIL CARB 650V 10A DFN8080A

Micro Commercial Co

6,000 -
SIC1060PL8-TP

数据表

- 4-PowerVSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 44 µA @ 650 V 452pF @ 0V, 1MHz - - Surface Mount DFN8080A -55°C ~ 175°C
AIDK08S65C5ATMA1

AIDK08S65C5ATMA1

DISCRETE DIODES

Infineon Technologies

188 -
AIDK08S65C5ATMA1

数据表

CoolSiC™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 248pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount PG-TO263-2 -40°C ~ 175°C
SCS206AJHRTLL

SCS206AJHRTLL

DIODE SIL CARB 650V 6A TO263AB

Rohm Semiconductor

2,756 -
SCS206AJHRTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
S3D20065A

S3D20065A

DIODE SIL CARB 650V 20A TO220AC

SMC Diode Solutions

289 -
S3D20065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 1200pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
SCS310AJTLL

SCS310AJTLL

DIODE SIL CARBIDE 650V 10A LPTL

Rohm Semiconductor

518 -
SCS310AJTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
APT15DQ120BHBG

APT15DQ120BHBG

DIODE GEN PURP 1.2KV 15A TO247-3

Microchip Technology

101 -
APT15DQ120BHBG

数据表

- TO-247-3 Tube Active Standard 1200 V 15A 3.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 240 ns 100 µA @ 1200 V - - - Through Hole TO-247-3 -55°C ~ 175°C
VS-40EPF06-M3

VS-40EPF06-M3

DIODE GP 600V 40A TO247AC

Vishay General Semiconductor - Diodes Division

478 -
VS-40EPF06-M3

数据表

- TO-247-2 Tube Active Standard 600 V 40A 1.25 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 600 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
STTH6010WY

STTH6010WY

DIODE GEN PURP 1KV 60A DO247

STMicroelectronics

548 -
STTH6010WY

数据表

Q DO-247-2 (Straight Leads) Tube Active Standard 1000 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1000 V - Automotive - Through Hole DO-247 -40°C ~ 175°C
C3D08065A

C3D08065A

DIODE SIL CARB 650V 24A TO220-2

Wolfspeed, Inc.

718 -
C3D08065A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 24A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 441pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
FFSP2065BDN-F085

FFSP2065BDN-F085

DIODE SIL CARB 650V 10A TO220-3

onsemi

180 -
FFSP2065BDN-F085

数据表

- TO-220-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-220-3 -55°C ~ 175°C
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