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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
LSIC2SD065D10A

LSIC2SD065D10A

DIODE SIL CARBIDE 650V 27A TO263

Littelfuse Inc.

499 -
LSIC2SD065D10A

数据表

GEN2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 27A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 470pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
S3D20065H

S3D20065H

DIODE SIL CARB 650V 20A TO247AC

SMC Diode Solutions

420 -
S3D20065H

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 1200pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
AIDK12S65C5ATMA1

AIDK12S65C5ATMA1

DISCRETE DIODES

Infineon Technologies

757 -
AIDK12S65C5ATMA1

数据表

CoolSiC™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 363pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount PG-TO263-2 -40°C ~ 175°C
DUR6060W

DUR6060W

DIODE GEN PURP 600V 60A TO247AC

Littelfuse Inc.

193 -
DUR6060W

数据表

DUR TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - - - Through Hole TO-247AC -55°C ~ 150°C
STPSC15H12WL

STPSC15H12WL

DIODE SIL CARB 1.2KV 15A DO247

STMicroelectronics

982 -
STPSC15H12WL

数据表

ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 1200 V 1200pF @ 0V, 1MHz - - Through Hole DO-247 -40°C ~ 175°C
MSC030SDA070K

MSC030SDA070K

DIODE SIL CARB 700V 30A TO220-2

Microchip Technology

119 -
MSC030SDA070K

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 30A 1.5 V @ 30 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 -
MSC015SDA120B

MSC015SDA120B

DIODE SCHOTTKY 1.2KV 15A TO247

Microchip Technology

134 -
MSC015SDA120B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
VS-3C12ET07S2L-M3

VS-3C12ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

1,557 -
VS-3C12ET07S2L-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 65 µA @ 650 V 535pF @ 1V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
S4D10120E

S4D10120E

DIODE SIL CARBIDE 1.2KV 10A DPAK

SMC Diode Solutions

1,286 -
S4D10120E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 772pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
SCS312AJTLL

SCS312AJTLL

DIODE SIL CARBIDE 650V 12A LPTL

Rohm Semiconductor

849 -
SCS312AJTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 600pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
RFL30TZ6SGC13

RFL30TZ6SGC13

DIODE GEN PURP 650V 30A TO247GE

Rohm Semiconductor

624 -
RFL30TZ6SGC13

数据表

- TO-247-2 Tube Not For New Designs Standard 650 V 30A 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 650 V - - - Through Hole TO-247GE 175°C
S4D15120A

S4D15120A

DIODE SIL CARB 1.2KV 15A TO220AC

SMC Diode Solutions

192 -
S4D15120A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 35 µA @ 1200 V 1200pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
IDW16G65C5XKSA1

IDW16G65C5XKSA1

DIODE SIL CARB 650V 16A TO247-3

Infineon Technologies

257 -
IDW16G65C5XKSA1

数据表

CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
SCS208AJHRTLL

SCS208AJHRTLL

DIODE SIL CARB 650V 8A TO263AB

Rohm Semiconductor

932 -
SCS208AJHRTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.55 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 160 µA @ 600 V 291pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
NDSH20120C

NDSH20120C

DIODE SIL CARB 1.2KV 26A TO247-2

onsemi

664 -
NDSH20120C

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 26A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1480pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N3881R

1N3881R

DIODE GEN PURP REV 200V 6A DO4

GeneSiC Semiconductor

512 -
1N3881R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 200 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 15 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
1N3879R

1N3879R

DIODE GEN PURP REV 50V 6A DO4

GeneSiC Semiconductor

236 -
1N3879R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 50 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 15 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FFSB2065B-F085

FFSB2065B-F085

DIODE SIL CARB 650V 20A D2PAK-3

onsemi

678 -
FFSB2065B-F085

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
JANTX1N3595UR-1

JANTX1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

141 -
JANTX1N3595UR-1

数据表

- DO-213AA Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Surface Mount DO-213AA -65°C ~ 175°C
DSEP30-12AR

DSEP30-12AR

DIODE GP 1.2KV 30A ISOPLUS247

IXYS

264 -
DSEP30-12AR

数据表

HiPerFRED™ TO-247-3 Tube Active Standard 1200 V 30A 2.74 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 250 µA @ 1200 V - - - Through Hole ISOPLUS247™ -55°C ~ 175°C
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