单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SCS220KGC17

SCS220KGC17

DIODE SIC 1.2KV 20A TO220ACFP

Rohm Semiconductor

991 -
SCS220KGC17

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.6 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 1050pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
NDSH50120C

NDSH50120C

DIODE SIL CARB 1.2KV 53A TO247-2

onsemi

1,167 -
NDSH50120C

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 53A 1.75 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 3691pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
LSIC2SD170B10

LSIC2SD170B10

DIODE SIL CARB 1.7KV 31A TO247-2

Littelfuse Inc.

437 -
LSIC2SD170B10

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 31A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1700 V 757pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
FFSH40120ADN-F085

FFSH40120ADN-F085

DIODE SIL CARB 1.2KV 25A TO247-3

onsemi

434 -
FFSH40120ADN-F085

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 25A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
S85YR

S85YR

DIODE GEN PURP REV 1.6KV 85A DO5

GeneSiC Semiconductor

208 -
S85YR

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1600 V 85A 1.1 V @ 85 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
FR40MR05

FR40MR05

DIODE GEN PURP REV 1KV 40A DO5

GeneSiC Semiconductor

155 -
FR40MR05

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1000 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
LSIC2SD065E40CCA

LSIC2SD065E40CCA

DIODE SIL CARB 650V 45A TO247AD

Littelfuse Inc.

435 -
LSIC2SD065E40CCA

数据表

GEN2 TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 45A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 960pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
E4D20120A

E4D20120A

DIODE SIL CARB 1.2KV 54.5A TO220

Wolfspeed, Inc.

453 -
E4D20120A

数据表

E-Series TO-220-2 Tube Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 54.5A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1500pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
UES1104

UES1104

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

105 -
UES1104

数据表

- A, Axial Bulk Active Standard 200 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V - - - Through Hole A, Axial -55°C ~ 150°C
MNS1N6627US/TR

MNS1N6627US/TR

DIODE GEN PURP 440V 1.75A E-MELF

Microchip Technology

483 -
MNS1N6627US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 440 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V - - - Surface Mount E-MELF -65°C ~ 150°C
63SPD100A

63SPD100A

DIODE SCHOTT 100V 60A MINI SPD-4

SMC Diode Solutions

180 -
63SPD100A

数据表

- Nonstandard SMD Bag Active Schottky 100 V 60A - Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V 1200pF @ 5V, 1MHz - - Surface Mount Mini SPD-4 -55°C ~ 175°C
122NQ030R-1

122NQ030R-1

DIODE SCHOTTKY 30V 120A PRM1-1

SMC Diode Solutions

228 -
122NQ030R-1

数据表

- HALF-PAK Bulk Active Schottky 30 V 120A 490 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 30 V 7400pF @ 5V, 1MHz - - Chassis Mount PRM1-1 (Half Pak Module) -55°C ~ 150°C
249NQ150-1

249NQ150-1

DIODE SCHOTTKY 150V PRM1-1

SMC Diode Solutions

452 -
249NQ150-1

数据表

- HALF-PAK Bulk Active Schottky 150 V - 1.07 V @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 6 mA @ 150 V 6000pF @ 5V, 1MHz - - Chassis Mount PRM1-1 (Half Pak Module) -55°C ~ 175°C
MBRH12040R

MBRH12040R

DIODE SCHOTTKY REV 40V 120A D-67

GeneSiC Semiconductor

44 -
MBRH12040R

数据表

- D-67 HALF-PAK Bulk Active Schottky, Reverse Polarity 40 V 120A 700 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V - - - Chassis Mount D-67 -55°C ~ 150°C
MBRH20045R

MBRH20045R

DIODE SCHOTTKY REV 45V 200A D-67

GeneSiC Semiconductor

62 -
MBRH20045R

数据表

- D-67 Bulk Active Schottky, Reverse Polarity 45 V 200A 700 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V - - - Chassis Mount D-67 -55°C ~ 150°C
MBRH20045

MBRH20045

DIODE SCHOTTKY 45V 200A D-67

GeneSiC Semiconductor

52 -
MBRH20045

数据表

- D-67 Bulk Active Schottky 45 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - - - Chassis Mount D-67 -
56DN06B02ELEMXPSA1

56DN06B02ELEMXPSA1

DIODE GP 600V 11140A E-EUPEC-0

Infineon Technologies

5 -
56DN06B02ELEMXPSA1

数据表

- DO-200AB, B-PUK Bulk Active Standard 600 V 11140A 940 mV @ 8000 A Standard Recovery >500ns, > 200mA (Io) - 60 mA @ 600 V - - - Clamp On E-EUPEC-0 180°C (Max)
PR1007G-T

PR1007G-T

DIODE GEN PURP 1KV 1A DO41

Diodes Incorporated

5,000 -
PR1007G-T

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 8pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
ES2J

ES2J

DIODE GEN PURP 600V 2A DO214AA

Taiwan Semiconductor Corporation

12,000 -
ES2J

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Standard 600 V 2A 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 20pF @ 4V, 1MHz - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
BAS16TS_R1_00001

BAS16TS_R1_00001

SOD-523, SWITCHING

Panjit International Inc.

67,510 -
BAS16TS_R1_00001

数据表

- SC-79, SOD-523 Tape & Reel (TR) Active Standard 75 V 125mA 855 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed 6 ns 1 µA @ 75 V - - - Surface Mount SOD-523 -55°C ~ 150°C
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