场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
GCMX080A120B2H1P

GCMX080A120B2H1P

MOSFET 4N-CH 1200V 27A

SemiQ

13 -
GCMX080A120B2H1P

数据表

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 27A (Tc) 100mOhm @ 20A, 20V 4V @ 10mA 56nC @ 20V 1362pF @ 800V 119W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
DF16MR12W1M1HFB67BPSA1

DF16MR12W1M1HFB67BPSA1

MOSFET 2N-CH 1200V 25A

Infineon Technologies

24 -
DF16MR12W1M1HFB67BPSA1

数据表

EasyPACK™, CoolSiC™ - Tray Active - 2 N-Channel - 1200V (1.2kV) 25A 32.3mOhm @ 25A, 18V 5.15V @ 10mA 74nC @ 18V 2200pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
GCMX040A120B2H1P

GCMX040A120B2H1P

MOSFET 4N-CH 1200V 56A

SemiQ

7 -
GCMX040A120B2H1P

数据表

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 56A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 121nC @ 20V 3200pF @ 800V 217W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2B1P

GCMX020A120B2B1P

MOSFET 2N-CH 1200V 102A

SemiQ

20 -
GCMX020A120B2B1P

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 241nC @ 20V 6500pF @ 800V 385W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF33MR12W1M1HB11BPSA1

FF33MR12W1M1HB11BPSA1

MOSFET

Infineon Technologies

23 -
FF33MR12W1M1HB11BPSA1

数据表

- - Tray Active - - - - - - - - - - - - - - -
GCMX040A120B3H1P

GCMX040A120B3H1P

MOSFET 4N-CH 1200V 53A

SemiQ

17 -
GCMX040A120B3H1P

数据表

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 53A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 125nC @ 20V 3200pF @ 800V 208W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH015P120M3F1PTG

NXH015P120M3F1PTG

MOSFET 2N-CH 1200V 77A

onsemi

13 -
NXH015P120M3F1PTG

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
DF14MR12W1M1HFB67BPSA1

DF14MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
DF14MR12W1M1HFB67BPSA1

数据表

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
NXH008P120M3F1PG

NXH008P120M3F1PG

MOSFET 2N-CH 1200V 145A

onsemi

18 -
NXH008P120M3F1PG

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2H1P

GCMX020A120B2H1P

MOSFET 4N-CH 1200V 102A

SemiQ

10 -
GCMX020A120B2H1P

数据表

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 222nC @ 20V 5600pF @ 800V 333W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF11MR12W2M1HPB11BPSA1

FF11MR12W2M1HPB11BPSA1

MOSFET 1200V

Infineon Technologies

18 -
FF11MR12W2M1HPB11BPSA1

数据表

CoolSiC™ - Tray Active - - - 1200V (1.2kV) - - - - - - - - - - -
GCMX010A120B3B1P

GCMX010A120B3B1P

MOSFET 2N-CH 1200V 173A

SemiQ

9 -
GCMX010A120B3B1P

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 173A (Tc) 14mOhm @ 100A, 20V 4V @ 40mA 483nC @ 20V 13800pF @ 800V 577W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B3H1P

GCMX020A120B3H1P

MOSFET 4N-CH 1200V 93A

SemiQ

4 -
GCMX020A120B3H1P

数据表

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 93A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 250nC @ 20V 6700pF @ 800V 300W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF17MR12W1M1HPB11BPSA1

FF17MR12W1M1HPB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
FF17MR12W1M1HPB11BPSA1

数据表

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
DF8MR12W1M1HFB67BPSA1

DF8MR12W1M1HFB67BPSA1

MOSFET 2N-CH 1200V 45A AG-EASY1B

Infineon Technologies

22 -
DF8MR12W1M1HFB67BPSA1

数据表

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 45A 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB70BPSA1

FF17MR12W1M1HB70BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13 -
FF17MR12W1M1HB70BPSA1

数据表

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB17BPSA1

FF17MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V 50A AG-EASY1B

Infineon Technologies

24 -

-

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
NXH011F120M3F2PTHG

NXH011F120M3F2PTHG

MOSFET 4N-CH 1200V 105A 34PIM

onsemi

13 -
NXH011F120M3F2PTHG

数据表

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 16mOhm @ 100A, 18V 4.4V @ 60mA 284nC @ 18V 6211.6pF @ 800V 244W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
FF8MR12W1M1HB70BPSA1

FF8MR12W1M1HB70BPSA1

MOSFET

Infineon Technologies

20 -
FF8MR12W1M1HB70BPSA1

数据表

- - Tray Active - - - - - - - - - - - - - - -
FF7MR12W1M1HB17BPSA1

FF7MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

24 -

-

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tj) 5.8mOhm @ 120A, 18V 5.15V @ 56mA 400nC @ 18V 12100pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
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