场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM170HRM233AG

MSCSM170HRM233AG

MOSFET 4N-CH 1700V/1200V 124A

Microchip Technology

10 -
MSCSM170HRM233AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 124A (Tc), 89A (Tc) 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V 3.2V @ 5mA, 2.8V @ 3mA 356nC @ 20V, 232nC @ 20V 6600pF @ 1000V, 3020pF @ 1000V 602W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF6MR20W2M1HB70BPSA1

FF6MR20W2M1HB70BPSA1

FF6MR20W2M1HB70BPSA1

Infineon Technologies

15 -
FF6MR20W2M1HB70BPSA1

数据表

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2000V (2kV) 160A (Tj) 8.1mOhm @ 160A, 18V 5.15V @ 112mA 780nC @ 3V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

Infineon Technologies

15 -
F3L6MR20W2M1HB70BPSA1

数据表

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 4 N-Channel Silicon Carbide (SiC) 2000V (2kV) 155A (Tj) 8.7mOhm @ 100A, 18V 5.15V @ 112mA 297nC @ 18V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM163AG

MSCSM120HRM163AG

MOSFET 4N-CH 1200V/700V 173A

Microchip Technology

10 -
MSCSM120HRM163AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 173A (Tc), 124A (Tc) 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V 2.8V @ 6mA, 2.4V @ 4mA 464nC, 215nC @ 20V 6040pF @ 1000V, 4500pF @ 700V 745W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB6R0A23GM4

CAB6R0A23GM4

MOSFET 2N-CH 2300V 150A

Wolfspeed, Inc.

6 -
CAB6R0A23GM4

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 8.4mOhm @ 200A, 15V 4V @ 95mA 735nC @ 15V 30500pF @ 1.5kV 610W -40°C ~ 150°C (TJ) - - Chassis Mount -
FF3MR12KM1HHPSA1

FF3MR12KM1HHPSA1

MOSFET 2N-CH 1200V 190A AG62MMHB

Infineon Technologies

19 -
FF3MR12KM1HHPSA1

数据表

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 190A (Tc) 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
FF3MR12KM1HPHPSA1

FF3MR12KM1HPHPSA1

MOSFET 2N-CH 1200V 220A AG62MMHB

Infineon Technologies

13 -
FF3MR12KM1HPHPSA1

数据表

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 220A 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
APTM100A13SCG

APTM100A13SCG

MOSFET 2N-CH 1000V 65A SP6

Microchip Technology

4 -

-

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
FF5MR20KM1HHPSA1

FF5MR20KM1HHPSA1

MOSFET

Infineon Technologies

9 -
FF5MR20KM1HHPSA1

数据表

- - Tray Active - - - - - - - - - - - - - - -
FF4MR20KM1HPHPSA1

FF4MR20KM1HPHPSA1

MOSFET 2N-CH 2000V AG-62MMHB

Infineon Technologies

10 -
FF4MR20KM1HPHPSA1

数据表

C, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C - - Chassis Mount AG-62MMHB
BSM450D12P4G102

BSM450D12P4G102

MOSFET 2N-CH 1200V 447A MODULE

Rohm Semiconductor

4 -
BSM450D12P4G102

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 447A (Tc) - 4.8V @ 218.4mA - 44000pF @ 10V 1.45kW (Tc) 175°C (TJ) - - Chassis Mount Module
HAS175M12BM3

HAS175M12BM3

MOSFET 2N-CH 1200V 175A

Wolfspeed, Inc.

3 -
HAS175M12BM3

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 175A - - - - - - - - Chassis Mount -
FF1MR12KM1HHPSA1

FF1MR12KM1HHPSA1

MOSFET

Infineon Technologies

12 -
FF1MR12KM1HHPSA1

数据表

- - Tray Active - - - - - - - - - - - - - - -
FF1MR12KM1HPHPSA1

FF1MR12KM1HPHPSA1

MOSFET

Infineon Technologies

16 -
FF1MR12KM1HPHPSA1

数据表

- - Tray Active - - - - - - - - - - - - - - -
MSCSM170HRM11NG

MSCSM170HRM11NG

MOSFET 4N-CH 1700V/1200V 226A

Microchip Technology

4 -
MSCSM170HRM11NG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 226A (Tc), 163A (Tc) 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V 3.2V @ 10mA, 2.8V @ 6mA 712nC @ 20V, 464nC @ 20V 13200pF @ 1000V, 6040pF @ 1000V 1.012kW (Tc), 662W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6AG

MSCSM120AM042T6AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

4 -
MSCSM120AM042T6AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM08NG

MSCSM120HRM08NG

MOSFET 4N-CH 1200V/700V 317A

Microchip Technology

8 -
MSCSM120HRM08NG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V 2.8V @ 12mA, 2.4V @ 8mA 928nC @ 20V, 430nC @ 20V 12100pF @ 1000V, 9000pF @ 700V 1.253kW (Tc), 613W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NVVR26A120M1WST

NVVR26A120M1WST

MOSFET 2N-CH 1200V AHPM15-CDA

onsemi

6 -
NVVR26A120M1WST

数据表

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDA
ADP46075W3

ADP46075W3

MOSFET 6N-CH 750V 485A ACEPACK

STMicroelectronics

5 -
ADP46075W3

数据表

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 750V 485A (Tj) 2.05mOhm @ 460A, 18V 4.4V @ 40mA 984nC @ 18V 27050pF @ 400V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
MSCSM170HRM075NG

MSCSM170HRM075NG

MOSFET 4N-CH 1700V/1200V 337A

Microchip Technology

7 -
MSCSM170HRM075NG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V 3.2V @ 15mA, 2.8V @ 12mA 1068nC @ 20V, 928nC @ 20V 19800pF @ 1000V, 12100pF @ 1000V 1.492kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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