场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NTMFS4823NT1G

NTMFS4823NT1G

MOSFET N-CH 30V 6.9A/30A 5DFN

onsemi

4,367 -
NTMFS4823NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 30A (Tc) 4.5V, 11.5V 10.6mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 11.5 V ±20V 795 pF @ 15 V - 860mW (Ta), 32.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDS9412

FDS9412

MOSFET N-CH 30V 7.9A 8SOIC

Fairchild Semiconductor

113,738 -
FDS9412

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.9A (Ta) 4.5V, 10V 22mOhm @ 7.9A, 10V 2V @ 250µA 22 nC @ 10 V ±20V 830 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTP85N03

NTP85N03

MOSFET N-CH 28V 85A TO220AB

onsemi

8,324 -
NTP85N03

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28 V 85A (Tc) 4.5V, 10V 6.8mOhm @ 40A, 10V 3V @ 250µA 29 nC @ 4.5 V ±20V 2150 pF @ 24 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
2SK583-MTK-AA

2SK583-MTK-AA

MOSFET N-CH

onsemi

102,000 -
2SK583-MTK-AA

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA1915TE(0)-T1-AT

UPA1915TE(0)-T1-AT

P-CHANNEL MOSFET

Renesas Electronics Corporation

78,000 -
UPA1915TE(0)-T1-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
ECH8301-TL-E

ECH8301-TL-E

P CHANNEL SILICON MOS FET

onsemi

62,692 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD80N02-1G

NTD80N02-1G

MOSFET N-CH 24V 80A IPAK

onsemi

2,518 -
NTD80N02-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 80A (Tc) 4.5V, 10V 5.8mOhm @ 80A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 2600 pF @ 20 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
NDF03N60ZH

NDF03N60ZH

MOSFET N-CH 600V 3.1A TO220FP

onsemi

9,620 -
NDF03N60ZH

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4.5V @ 50µA 18 nC @ 10 V ±30V 372 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
FQU1N60CTU

FQU1N60CTU

MOSFET N-CH 600V 1A IPAK

onsemi

6,546 -
FQU1N60CTU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 4V @ 250µA 6.2 nC @ 10 V ±30V 170 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
NTD4806N-35G

NTD4806N-35G

MOSFET N-CH 30V 11.3A/79A IPAK

onsemi

9,869 -
NTD4806N-35G

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) 4.5V, 11.5V 6mOhm @ 30A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2142 pF @ 12 V - 1.4W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTTFS4939NTAG

NTTFS4939NTAG

MOSFET N-CH 30V 8.9A/52A 8WDFN

onsemi

3,709 -
NTTFS4939NTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta), 52A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.2V @ 250µA 28 nC @ 10 V ±20V 1979 pF @ 15 V - 850mW (Ta), 29.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
MGSF3433VT1-ON

MGSF3433VT1-ON

PFET TSOP6S 20V 0.098R TR

onsemi

35,900 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
EC4307KF-TR

EC4307KF-TR

PCH 1.8V DRIVE SERIES

onsemi

32,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
ECH8301-TL-E-SY

ECH8301-TL-E-SY

P CHANNEL SILICON MOS FET

Sanyo

30,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
RFP8P10

RFP8P10

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

29,973 -
RFP8P10

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 400mOhm @ 8A, 10V 4V @ 250µA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SFR9120TM

SFR9120TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

27,709 -
SFR9120TM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 4.9A (Tc) 10V 600mOhm @ 2.5A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 550 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
CPH6314-TL-E

CPH6314-TL-E

PCH 4V DRIVE SERIES

onsemi

19,798 -

-

- - Bulk Active - - - - - - - - - - - - - - - - -
SSF7320

SSF7320

MOSFET, N-CH, SINGLE, 0.8A, 20V,

Good-Ark Semiconductor

15,838 -
SSF7320

数据表

- SOT-723 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 300mOhm @ 500mA, 4.5V 1.2V @ 250µA 1 nC @ 4.5 V ±12V 75 pF @ 10 V - 450mW -55°C ~ 150°C - - Surface Mount SOT-723
BSC091N03MSCGATMA1

BSC091N03MSCGATMA1

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies

15,000 -
BSC091N03MSCGATMA1

数据表

SIPMOS® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 44A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
AM2340NE

AM2340NE

MOSFET N-CH 40V 5A SOT-23

Analog Power Inc.

15,000 -
AM2340NE

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 5.2A (Ta) 4.5V, 10V 43mOhm @ 5.2A, 10V 1V @ 250µA 4 nC @ 4.5 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
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