场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
BUK95150-55A,127

BUK95150-55A,127

MOSFET N-CH 55V 13A TO220AB

NXP USA Inc.

7,691 -
BUK95150-55A,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 13A (Tc) 4.5V, 10V 137mOhm @ 13A, 10V 2V @ 1mA - ±10V 339 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
RFP2P08

RFP2P08

P-CHANNEL POWER MOSFET

Harris Corporation

3,542 -
RFP2P08

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 80 V 2A (Tc) 10V 3.5Ohm @ 1A, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
RFP2N08

RFP2N08

N-CHANNEL, MOSFET

Harris Corporation

3,360 -
RFP2N08

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 2A (Tc) 10V 1.05Ohm @ 2A, 5V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTD32N06-1G

NTD32N06-1G

MOSFET N-CH 60V 32A IPAK

onsemi

4,647 -
NTD32N06-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta) 10V 26mOhm @ 16A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1725 pF @ 25 V - 1.5W (Ta), 93.75W (Tj) -55°C ~ 175°C (TJ) - - Through Hole IPAK
CPH6332-TL-E

CPH6332-TL-E

PCH 1.8V DRIVE SERIES

onsemi

3,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
MGSF3433VT1

MGSF3433VT1

PFET TSOP6S 20V 0.098R TR

Motorola

2,800 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
BSO065N03MSG

BSO065N03MSG

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

2,500 -
BSO065N03MSG

数据表

OptiMOS™ 3 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 40 nC @ 10 V ±20V 3100 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
RW1A025APT2CR

RW1A025APT2CR

MOSFET P-CH 12V 2.5A WEMT6

Rohm Semiconductor

2,465 -
RW1A025APT2CR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 2.5A (Ta) 1.5V, 4.5V 62mOhm @ 2.5A, 4.5V 1V @ 1mA 16 nC @ 4.5 V -8V 2000 pF @ 6 V - 400mW (Ta) 150°C (TJ) - - Surface Mount 6-WEMT
NVD5490NLT4G-VF01

NVD5490NLT4G-VF01

MOSFET N-CH 60V 5A/17A DPAK

onsemi

6,161 -
NVD5490NLT4G-VF01

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta), 17A (Tc) 4.5V, 10V 64mOhm @ 9A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 365 pF @ 25 V - 3.4W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
SFR2955TF

SFR2955TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,000 -
SFR2955TF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 7.6A (Tc) 10V 300mOhm @ 3.8A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FDFMA3P029Z

FDFMA3P029Z

MOSFET P-CH 30V 3.3A 6MICROFET

Fairchild Semiconductor

1,964 -
FDFMA3P029Z

数据表

PowerTrench® 6-WDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 3.3A (Ta) - 87mOhm @ 3.3A, 10V 3V @ 250µA 10 nC @ 10 V - 435 pF @ 15 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MLP (2x2)
IRFW820BTM

IRFW820BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,574 -
IRFW820BTM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 2.6Ohm @ 1.25A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 610 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI4835DY

SI4835DY

P-CHANNEL MOSFET

Fairchild Semiconductor

1,298 -
SI4835DY

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta) 4.5V, 10V 20mOhm @ 8.8A, 10V 3V @ 250µA 27 nC @ 10 V ±25V 1680 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
HUFA76409D3S

HUFA76409D3S

MOSFET N-CH 60V 18A TO252AA

Fairchild Semiconductor

1,222 -
HUFA76409D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
NTMFS4C910NBT3G

NTMFS4C910NBT3G

TRENCH 6 30V NCH

onsemi

5,000 -

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NDF02N60ZH

NDF02N60ZH

MOSFET N-CH 600V 2.4A TO220FP

onsemi

6,865 -
NDF02N60ZH

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 16 nC @ 10 V ±30V 325 pF @ 25 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
NTD4813NHT4G

NTD4813NHT4G

MOSFET N-CH 30V 7.6A/40A DPAK

onsemi

5,843 -
NTD4813NHT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 940 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
PMN70XPEAX

PMN70XPEAX

MOSFET P-CH 20V 3.2A 6TSOP

Nexperia USA Inc.

6,621 -
PMN70XPEAX

数据表

- SC-74, SOT-457 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.5V, 4.5V 85mOhm @ 2A, 4.5V 1.25V @ 250µA 7.8 nC @ 4.5 V ±12V 602 pF @ 10 V - 500mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
3SK295ZQ-TL-E

3SK295ZQ-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

36,000 -
3SK295ZQ-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA621TT-E1-A

UPA621TT-E1-A

MOSFET N-CH 20V 5A 6WSOF

Renesas Electronics Corporation

30,000 -
UPA621TT-E1-A

数据表

- 6-SMD, Flat Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) - 50mOhm @ 2.5A, 4.5V 1.5V @ 1mA 3.3 nC @ 4 V - 270 pF @ 10 V - 200mW (Ta) 150°C (TJ) - - Surface Mount 6-WSOF
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