场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
2SJ243(0)-T1-A

2SJ243(0)-T1-A

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

16,000 -
2SJ243(0)-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
GSFF0308

GSFF0308

MOSFET, N-CH, SINGLE, 780MA, 30V

Good-Ark Semiconductor

15,890 -
GSFF0308

数据表

- SOT-723 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 780mA (Ta) 2.5V, 4.5V 450mOhm @ 300mA, 4.5V 1.2V @ 250µA 5.2 nC @ 4.5 V ±12V 146 pF @ 15 V - 446mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-723
SI3139KL3A-TP

SI3139KL3A-TP

P-CHANNEL MOSFET,DFN1006-3

Micro Commercial Co

12,304 -
SI3139KL3A-TP

数据表

- SC-101, SOT-883 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 650mA 1.8V, 4.5V 850mOhm @ 500mA, 4.5V 1.2V @ 250µA 0.86 nC @ 4.5 V ±12V 40 pF @ 16 V - 900mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1006-3
2SJ451ZK-TL-E

2SJ451ZK-TL-E

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

12,000 -
2SJ451ZK-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NVD4809NT4G

NVD4809NT4G

MOSFET N-CH 30V 9.6A/58A DPAK-3

onsemi

5,574 -
NVD4809NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 25 nC @ 11.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
BUK7535-55A,127

BUK7535-55A,127

PFET, 35A I(D), 55V, 0.035OHM, 1

NXP USA Inc.

9,896 -
BUK7535-55A,127

数据表

TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 35mOhm @ 20A, 10V 4V @ 1mA - ±20V 872 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FQD4N20TM

FQD4N20TM

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi

9,174 -
FQD4N20TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 1.4Ohm @ 1.5A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
FDMS7698

FDMS7698

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

7,000 -
FDMS7698

数据表

PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 22A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1605 pF @ 15 V - 2.5W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
GSF0304

GSF0304

MOSFET, P-CH, SINGLE, -4.1A, -30

Good-Ark Semiconductor

5,955 -
GSF0304

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 4.5V, 10V 65mOhm @ 4.1A, 10V 2.1V @ 250µA 13 nC @ 10 V ±20V 650 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
FDS6690A-NBNP006

FDS6690A-NBNP006

SINGLE N-CHANNEL, LOGIC LEVEL, P

Fairchild Semiconductor

5,311 -
FDS6690A-NBNP006

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V 3V @ 250µA 16 nC @ 5 V ±20V 1205 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
PSMN005-30K,518

PSMN005-30K,518

MOSFET N-CH 30V 20A 8SO

Nexperia USA Inc.

6,008 -
PSMN005-30K,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 5.5mOhm @ 15A, 10V 3V @ 1mA 34 nC @ 4.5 V ±20V 3100 pF @ 25 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDV304P-CGB8

FDV304P-CGB8

MOSFET P-CHANNEL

onsemi

3,318 -

-

- - Tape & Reel (TR) Obsolete - - - 460mA (Tj) - - - - - - - - - - - - -
2SJ243-T1-A

2SJ243-T1-A

MOSFET P-CH 30V 100MA SC75-3 USM

Renesas Electronics Corporation

1,622 -
2SJ243-T1-A

数据表

- SC-75, SOT-416 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) - 25Ohm @ 10mA, 4V 2.3V @ 10µA - - 16 pF @ 5 V - - - - - Surface Mount SC-75-3, USM
NTMFS4839NHT1G

NTMFS4839NHT1G

MOSFET N-CH 30V 9.5A/64A 5DFN

onsemi

4,569 -
NTMFS4839NHT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 64A (Tc) 4.5V, 11.5V 5.5mOhm @ 30A, 10V 2.5V @ 250µA 43.5 nC @ 11.5 V ±20V 2354 pF @ 12 V - 870mW (Ta), 42.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDMA8884

FDMA8884

MOSFET N-CH 30V 6.5/8A 6MICROFET

onsemi

2,889 -
FDMA8884

数据表

PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta), 8A (Tc) 4.5V, 10V 23mOhm @ 6.5A, 10V 3V @ 250µA 7.5 nC @ 10 V ±20V 450 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
NTTFS4928NTWG

NTTFS4928NTWG

MOSFET N-CH 30V 7.3A/37A 8WDFN

onsemi

6,741 -
NTTFS4928NTWG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.3A (Ta), 37A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.2V @ 250µA 8 nC @ 4.5 V ±20V 913 pF @ 15 V - 810mW (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
FDFS2P753Z

FDFS2P753Z

MOSFET P-CH 30V 3A 8SOIC

Fairchild Semiconductor

389,380 -
FDFS2P753Z

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) - 115mOhm @ 3A, 10V 3V @ 250µA 9.3 nC @ 10 V ±25V 455 pF @ 10 V Schottky Diode (Isolated) 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
CPH3438-TL-E

CPH3438-TL-E

NCH 4V DRIVE SERIES

onsemi

312,000 -
CPH3438-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NDD02N60Z-1G

NDD02N60Z-1G

MOSFET N-CH 600V 2.2A IPAK

onsemi

7,036 -
NDD02N60Z-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 10.1 nC @ 10 V ±30V 274 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
NTD85N02R-1G

NTD85N02R-1G

MOSFET N-CH 24V 12A/85A IPAK

onsemi

4,957 -
NTD85N02R-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 12A (Ta), 85A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2V @ 250µA 17.7 nC @ 5 V ±20V 2050 pF @ 20 V - 1.25W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户