场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NTD30N02T4G

NTD30N02T4G

N-CHANNEL POWER MOSFET

onsemi

22,500 -
NTD30N02T4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 24 V 30A (Ta) 4.5V, 10V 14.5mOhm @ 30A, 10V 3V @ 250µA 20 nC @ 4.5 V ±20V 1000 pF @ 20 V - 75W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
3SK324UG-TL-H

3SK324UG-TL-H

DUAL N-CHANNEL MOSFET

Renesas Electronics Corporation

16,727 -
3SK324UG-TL-H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTGD3133PT1H

NTGD3133PT1H

PFET TSOP6 20V 2.3A 145MO

onsemi

15,000 -
NTGD3133PT1H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HUFA76419P3

HUFA76419P3

MOSFET N-CH 60V 29A TO220-3

Fairchild Semiconductor

14,432 -
HUFA76419P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 3V @ 250µA 28 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
GSFB2121

GSFB2121

MOSFET, P-CH, SINGLE, -10.00A, -

Good-Ark Semiconductor

11,935 -
GSFB2121

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Tc) 1.8V, 4.5V 21mOhm @ 5A, 4.5V 1V @ 250µA 15 nC @ 4.5 V ±12V 1980 pF @ 15 V - 1.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
NTD4855N-1G

NTD4855N-1G

MOSFET N-CH 25V 14A/98A IPAK

onsemi

10,425 -
NTD4855N-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 14A (Ta), 98A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V 2.5V @ 250µA 32.7 nC @ 4.5 V ±20V 2950 pF @ 12 V - 1.35W (Ta), 66.7W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
HUFA76413D3ST

HUFA76413D3ST

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

9,843 -
HUFA76413D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 49mOhm @ 20A, 10V 3V @ 250µA 20 nC @ 10 V ±16V 645 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
UPA620TT-E1-A

UPA620TT-E1-A

MOSFET N-CH 20V 5A 6WSOF

Renesas Electronics Corporation

8,289 -
UPA620TT-E1-A

数据表

- 6-SMD, Flat Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) - 38mOhm @ 2.5A, 4.5V 1.5V @ 1mA 5.5 nC @ 4 V - 450 pF @ 10 V - - - - - Surface Mount 6-WSOF
NDF04N62ZG

NDF04N62ZG

MOSFET N-CH 620V 4.4A TO220FP

onsemi

8,707 -
NDF04N62ZG

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 620 V 4.4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 19 nC @ 10 V ±30V 535 pF @ 25 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SSF3341

SSF3341

MOSFET, P-CH, SINGLE, -4.2A, -30

Good-Ark Semiconductor

5,777 -
SSF3341

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A 2.5V, 10V 50mOhm @ 4.2A, 10V 1.3V @ 250µA 18 nC @ 10 V ±12V 712 pF @ 15 V - 1.4W -55°C ~ 150°C - - Surface Mount SOT-23
PH2625L,115

PH2625L,115

MOSFET N-CH 25V 100A LFPAK

NXP USA Inc.

5,684 -
PH2625L,115

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
BUK7528-55A,127

BUK7528-55A,127

PFET, 42A I(D), 55V, 0.028OHM, 1

NXP USA Inc.

4,260 -
BUK7528-55A,127

数据表

TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 1mA - ±20V 1165 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SSF3402

SSF3402

MOSFET, N-CH, SINGLE, 5A, 30V, S

Good-Ark Semiconductor

4,124 -
SSF3402

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 30mOhm @ 5A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 1050 pF @ 25 V - 1.38W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
FDV303N

FDV303N

MOSFET N-CH 25V 680MA SOT23

UMW

2,990 -
FDV303N

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
RQK0202RGDQAWS#H6

RQK0202RGDQAWS#H6

P CH MOS FET POWER SWITCHING

Renesas Electronics Corporation

2,980 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FDV301N

FDV301N

MOSFET N-CH 25V 220MA SOT23

UMW

2,950 -
FDV301N

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
FDN327N

FDN327N

MOSFET N-CH 20V 2A SOT23

UMW

2,448 -
FDN327N

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
IPU60R1K4C6AKMA1

IPU60R1K4C6AKMA1

MOSFET N-CH 600V 3.2A TO251-3

Infineon Technologies

8,603 -
IPU60R1K4C6AKMA1

数据表

CoolMOS™ C6 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
NTD65N03R

NTD65N03R

MOSFET N-CH 25V 9.5A/32A DPAK

onsemi

2,250 -
NTD65N03R

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.5A (Ta), 32A (Tc) 4.5V, 10V 8.4mOhm @ 30A, 10V 2V @ 250µA 16 nC @ 5 V ±20V 1400 pF @ 20 V - 1.3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTMFS4C10NAT1G

NTMFS4C10NAT1G

MOSFET N-CH 30V 8.2A SO8FL

onsemi

6,895 -

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
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