场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
UPA622TT-E1-A

UPA622TT-E1-A

MOSFET N-CH 30V 3A 6WSOF

Renesas Electronics Corporation

12,000 -
UPA622TT-E1-A

数据表

- 6-SMD, Flat Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) - 82mOhm @ 1.5A, 10V 2.5V @ 1mA 3.8 nC @ 10 V - 155 pF @ 10 V - 200mW (Ta) 150°C (TJ) - - Surface Mount 6-WSOF
2SK1657-T2B-A

2SK1657-T2B-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

12,000 -
2SK1657-T2B-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDU3N50NZTU

FDU3N50NZTU

MOSFET N-CH 500V 2.5A DPAK3

onsemi

2,352 -
FDU3N50NZTU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 2.5Ohm @ 1.25A, 10V 5V @ 250µA 8 nC @ 10 V ±25V 280 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
PHD97NQ03LT,118

PHD97NQ03LT,118

MOSFET N-CH 25V 75A DPAK

Nexperia USA Inc.

3,973 -
PHD97NQ03LT,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 4.5V, 10V 6.3mOhm @ 25A, 10V 2.15V @ 1mA 11.7 nC @ 4.5 V ±20V 1570 pF @ 12 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
IRLM120ATF

IRLM120ATF

MOSFET N-CH 100V 2.3A SOT223-4

onsemi

2,809 -
IRLM120ATF

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 2.3A (Tc) 5V 220mOhm @ 1.15A, 5V 2V @ 250µA 15 nC @ 5 V ±20V 440 pF @ 25 V - 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
PHD97NQ03LT,118

PHD97NQ03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.

5,000 -
PHD97NQ03LT,118

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4937NCT3G

NTMFS4937NCT3G

MOSFET N-CH 30V 10.2A 5DFN

onsemi

8,129 -

-

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10.2A (Ta) 4.5V, 10V 4mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 2516 pF @ 15 V - - - - - Surface Mount 5-DFN (5x6) (8-SOFL)
G1K1P06LH

G1K1P06LH

MOSFET P-CH 60V 4.5A 3.1W SOT-2

Goford Semiconductor

3,000 -
G1K1P06LH

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 4.5A (Tc) 10V 110mOhm @ -3A,- 10V 4V @ 250µA 11 nC @ 10 V ±20V 970 pF @ 30 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
IRLML6244TR

IRLML6244TR

MOSFET N-CH 20V 6.3A SOT23

UMW

3,000 -
IRLML6244TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6.3A (Ta) 2.5V, 4.5V 21mOhm @ 6.3A, 4.5V 1.1V @ 10µA - ±12V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML2030TR

IRLML2030TR

MOSFET N-CH 30V 2.7A SOT23

UMW

3,000 -
IRLML2030TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4.5V, 10V 100mOhm @ 2.7A, 10V 2.3V @ 25µA - ±20V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML6246TR

IRLML6246TR

MOSFET N-CH 20V 4.1A SOT23

UMW

3,000 -
IRLML6246TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 2.5V, 4.5V 46mOhm @ 4.1A, 4.5V 1.1V @ 5µA - ±12V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML0100TR

IRLML0100TR

MOSFET N-CH 100V 1.6A SOT23

UMW

3,000 -
IRLML0100TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 1.6A (Ta) 4.5V, 10V 220mOhm @ 1.6A, 10V 2.5V @ 25µA - ±16V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML2060TR

IRLML2060TR

MOSFET N-CH 60V 1.2A SOT23

UMW

3,000 -
IRLML2060TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 1.2A (Ta) 4.5V, 10V 480mOhm @ 1.2A, 10V 2.5V @ 25µA - ±16V - - 1.25W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML6346TR

IRLML6346TR

MOSFET N-CH 30V 3.4A SOT23

UMW

3,000 -
IRLML6346TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 3.4A (Ta) 2.5V, 4.5V 63mOhm @ 3.4A, 4.5V 1.1V @ 10µA - ±12V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRFML8244TR

IRFML8244TR

MOSFET N-CH 25V 5.8A SOT23

UMW

3,000 -
IRFML8244TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 5.8A (Ta) 4.5V, 10V 24mOhm @ 5.8A, 10V 2.35V @ 10µA - ±20V - - 1.25W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
MGSF1N03L

MGSF1N03L

MOSFET N-CH 30V 1.6A SOT23

UMW

3,000 -
MGSF1N03L

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4.5V, 10V 100mOhm @ 1.2A, 10V 2.4V @ 250µA - ±20V - - 420mW (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML9301TR

IRLML9301TR

MOSFET P-CH 30V 3.6A SOT23

UMW

3,000 -
IRLML9301TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 64mOhm @ 3.6A, 10V 2.4V @ 10µA - ±20V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML0030TR

IRLML0030TR

MOSFET N-CH 30V 5.3A SOT23

UMW

3,000 -
IRLML0030TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 27mOhm @ 5.2A, 10V 2.3V @ 25µA - ±20V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
NTR4503NT1G

NTR4503NT1G

MOSFET N-CH 30V 1.5A SOT23

UMW

3,000 -
NTR4503NT1G

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IRLML2803TR

IRLML2803TR

MOSFET N-CH 30V 1.2A SOT23

UMW

3,000 -
IRLML2803TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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