场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
IRFW530ATM

IRFW530ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,166 -
IRFW530ATM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 110mOhm @ 7A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 3.8W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
SFW9520TM

SFW9520TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,994 -
SFW9520TM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 550 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FDV305N

FDV305N

MOSFET N-CH 20V 900MA SOT23

UMW

1,928 -
FDV305N

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
SSM3J332R

SSM3J332R

MOSFET P-CH 30V 6A SOT23F

UMW

1,785 -
SSM3J332R

数据表

* SOT-23-3 Flat Leads Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 10V 42mOhm @ 5A, 10V 1.2V @ 1mA - ±12V - - 1W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
2SK4120LS

2SK4120LS

N-CHANNEL POWER MOSFET

onsemi

1,700 -
2SK4120LS

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RQK0604IGDQA#H1

RQK0604IGDQA#H1

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

1,646 -
RQK0604IGDQA#H1

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RFD4N06L

RFD4N06L

N-CHANNEL POWER MOSFET

Harris Corporation

1,424 -
RFD4N06L

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 5V 600mOhm @ 1A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FDN337N

FDN337N

MOSFET N-CH 30V 2.2A SOT23

UMW

1,180 -
FDN337N

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
2300F

2300F

N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9

Goford Semiconductor

1,129 -
2300F

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 2.5V, 4.5V 27mOhm @ 2.3A, 4.5V 900mV @ 250µA 11.6 nC @ 4.5 V ±12V 363 pF @ 10 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
FDMA7628

FDMA7628

FDMA7628 - SINGLE N-CHANNEL 1.5

Fairchild Semiconductor

89,038 -
FDMA7628

数据表

PowerTrench® 6-WDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.5V, 4.5V 14.5mOhm @ 9.4A, 4.5V 1V @ 250µA 17.5 nC @ 4.5 V ±8V 1680 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
FDFMA3N109

FDFMA3N109

MOSFET N-CH 30V 2.9A 6MICROFET

onsemi

6,668 -
FDFMA3N109

数据表

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.9A (Tc) 2.5V, 4.5V 123mOhm @ 2.9A, 4.5V 1.5V @ 250µA 3 nC @ 4.5 V ±12V 220 pF @ 15 V Schottky Diode (Isolated) 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
2SK1657-T1B-A

2SK1657-T1B-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

70,805 -
2SK1657-T1B-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDMA7628

FDMA7628

FDMA7628 - SINGLE N-CHANNEL 1.5

onsemi

33,686 -
FDMA7628

数据表

PowerTrench® 6-WDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.5V, 4.5V 14.5mOhm @ 9.4A, 4.5V 1V @ 250µA 17.5 nC @ 4.5 V ±8V 1680 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
IPSA70R950CEAKMA1

IPSA70R950CEAKMA1

MOSFET N-CH 700V 8.7A TO251-3

Infineon Technologies

2,653 -
IPSA70R950CEAKMA1

数据表

- TO-251-3 Stub Leads, IPAK Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 700 V 8.7A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 150µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 94W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-347
UPA572T(0)-T1-A

UPA572T(0)-T1-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

27,000 -
UPA572T(0)-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA654TT-E1-A

UPA654TT-E1-A

MOSFET P-CH 12V 6WSOF

Renesas Electronics Corporation

21,000 -
UPA654TT-E1-A

数据表

- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 12 V - - 88mOhm @ 1.5A, 4.5V 1.5V @ 1mA 2.7 nC @ 4 V - 250 pF @ 10 V - - - - - Surface Mount 6-WSOF
2SJ211(0)-T1B-A

2SJ211(0)-T1B-A

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

21,000 -
2SJ211(0)-T1B-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDS6294

FDS6294

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

18,921 -
FDS6294

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11.3mOhm @ 13A, 10V 3V @ 250µA 14 nC @ 5 V ±20V 1205 pF @ 15 V - 3W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
UPA651TT-E1-A

UPA651TT-E1-A

MOSFET P-CH 20V 5A 6WSOF

Renesas Electronics Corporation

15,000 -
UPA651TT-E1-A

数据表

- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) - 69mOhm @ 2.5A, 4.5V 1.5V @ 1mA 5.5 nC @ 4 V - 600 pF @ 10 V - 200mW (Ta) 150°C (TJ) - - Surface Mount 6-WSOF
FDMA7670

FDMA7670

MOSFET N-CH 30V 11A 6MICROFET

onsemi

7,262 -
FDMA7670

数据表

PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 15mOhm @ 11A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1360 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
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