场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
IRLML2244TR

IRLML2244TR

MOSFET P-CH 20V 4.3A SOT23

UMW

2,980 -
IRLML2244TR

数据表

* TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 54mOhm @ 4.3A, 4.5V 1.1V @ 10µA - ±12V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
PJA3476_R1_00001

PJA3476_R1_00001

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

2,955 -
PJA3476_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300mA (Ta) 4.5V, 10V 6Ohm @ 300mA, 10V 2.5V @ 250µA 1.8 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
GT800N10L

GT800N10L

MOSFET N-CH 100V 3.5A SOT-23-3L

Goford Semiconductor

2,598 -
GT800N10L

数据表

SGT TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Tc) 4.5V, 10V 80mOhm @ 2A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 209 pF @ 50 V - 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
UPA650TT-E1-A

UPA650TT-E1-A

MOSFET P-CH 12V 5A 6WSOF

Renesas Electronics Corporation

2,440 -
UPA650TT-E1-A

数据表

- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5A (Ta) - 50mOhm @ 2.5A, 4.5V 1.5V @ 1mA 5.5 nC @ 10 V - 610 pF @ 10 V - 200mW (Ta) 150°C (TJ) - - Surface Mount 6-WSOF
NTMFS5C442NLTWFT1G

NTMFS5C442NLTWFT1G

NTMFS5C442NLTWFT1G

onsemi

6,218 -
NTMFS5C442NLTWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDN304P

FDN304P

MOSFET P-CH 20V 2.4A SOT23

UMW

1,855 -
FDN304P

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
NTMFS4C910NAT1G

NTMFS4C910NAT1G

TRENCH 6 30V NCH

onsemi

7,500 -

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NTD70N03R

NTD70N03R

MOSFET N-CH 25V 10A/32A DPAK

onsemi

4,704 -
NTD70N03R

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10A (Ta), 32A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 5 V ±20V 1333 pF @ 20 V - 1.36W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTD70N03R-001

NTD70N03R-001

MOSFET N-CH 25V 10A/32A IPAK

onsemi

2,867 -
NTD70N03R-001

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10A (Ta), 32A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 5 V ±20V 1333 pF @ 20 V - 1.36W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTB23N03RG

NTB23N03RG

MOSFET N-CH 25V 23A D2PAK

onsemi

6,222 -
NTB23N03RG

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 23A (Ta) 4.5V, 10V 45mOhm @ 6A, 10V 2V @ 250µA 3.76 nC @ 4.5 V ±20V 225 pF @ 20 V - 37.5W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
G45P40T

G45P40T

MOSFET P-CH 40V 45A TO-220

Goford Semiconductor

13,000 -
G45P40T

数据表

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 45A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2.5V @ 250µA - ±20V - - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
FDFM2P110

FDFM2P110

MOSFET P-CH 20V 3.5A MICROFET

onsemi

4,511 -
FDFM2P110

数据表

PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 140mOhm @ 3.5A, 4.5V 1.5V @ 250µA 4 nC @ 4.5 V ±12V 280 pF @ 10 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount MicroFET 3x3mm
IRF730B

IRF730B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

238,000 -
IRF730B

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTMFS4837NT1G

NTMFS4837NT1G

MOSFET N-CH 30V 10A/74A 5DFN

onsemi

9,887 -
NTMFS4837NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 74A (Tc) 4.5V, 11.5V 5mOhm @ 30A, 10V 2.5V @ 250µA 22 nC @ 4.5 V ±20V 2048 pF @ 12 V - 880mW (Ta), 47.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
NTMFS4744NT1G

NTMFS4744NT1G

MOSFET N-CH 30V 7A 5DFN

onsemi

9,903 -
NTMFS4744NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 11.5V 7.6mOhm @ 30A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 12 V - 880mW (Ta), 47.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDZ204P

FDZ204P

MOSFET P-CH 20V 4.5A 9BGA

Fairchild Semiconductor

152,334 -
FDZ204P

数据表

PowerTrench® 9-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 45mOhm @ 4.5A, 4.5V 1.5V @ 250µA 13 nC @ 4.5 V ±12V 884 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 9-BGA (2x2.1)
ATP101-V-TL-H

ATP101-V-TL-H

MOSFET P-CH 30V 25A ATPAK

onsemi

9,857 -

-

- ATPAK (2 Leads+Tab) Tape & Reel (TR) Obsolete P-Channel - - 25A (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount ATPAK
FDU8780

FDU8780

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor

81,309 -
FDU8780

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 8.5mOhm @ 35A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1440 pF @ 13 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FDFS6N303

FDFS6N303

MOSFET N-CH 30V 6A 8SOIC

Fairchild Semiconductor

74,265 -
FDFS6N303

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 35mOhm @ 6A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 350 pF @ 15 V Schottky Diode (Isolated) 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTMS4917NR2G

NTMS4917NR2G

MOSFET N-CH 30V 7.1A 8SOIC

onsemi

9,573 -
NTMS4917NR2G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.1A (Ta) 4.5V, 10V 11mOhm @ 11A, 10V 2.5V @ 250µA 15.6 nC @ 4.5 V ±20V 1054 pF @ 25 V - 880mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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