场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
FQP9N15

FQP9N15

MOSFET N-CH 150V 9A TO220-3

Fairchild Semiconductor

1,418 -
FQP9N15

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 13 nC @ 10 V ±25V 410 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FQD3N40TM

FQD3N40TM

MOSFET N-CH 400V 2A DPAK

Fairchild Semiconductor

1,367 -
FQD3N40TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
RFD3N08L

RFD3N08L

N-CHANNEL POWER MOSFET

Harris Corporation

1,346 -
RFD3N08L

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 5V 800mOhm @ 1.5A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FK4B01120L1

FK4B01120L1

MOSFET N-CH 12V 3.9A ULGA004

Panasonic Electronic Components

2,000 -
FK4B01120L1

数据表

- 4-XFLGA, CSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.5V, 4.5V 24mOhm @ 1.5A, 4.5V 1V @ 394µA 7 nC @ 4.5 V ±8V 490 pF @ 10 V - 370mW (Ta) -40°C ~ 85°C (TA) - - Surface Mount ULGA004-W-1010-RA01
2SK4212A-ZK-E1-AY

2SK4212A-ZK-E1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

738,900 -
2SK4212A-ZK-E1-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4936NT1G

NTMFS4936NT1G

MOSFET N-CH 30V 11.6A/79A 5DFN

onsemi

6,533 -
NTMFS4936NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.6A (Ta), 79A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 10V 2.2V @ 250µA 43 nC @ 10 V ±20V 3044 pF @ 15 V - 920mW (Ta), 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
NTD4855NT4G

NTD4855NT4G

MOSFET N-CH 25V 14A/98A DPAK

onsemi

4,259 -
NTD4855NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 14A (Ta), 98A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V 2.5V @ 250µA 32.7 nC @ 4.5 V ±20V 2950 pF @ 12 V - 1.35W (Ta), 66.7W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
FDV302P

FDV302P

MOSFET P-CH 25V 120MA SOT23

onsemi

7,696 -
FDV302P

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 25 V 120mA (Ta) 2.7V, 4.5V 10Ohm @ 200mA, 4.5V 1.5V @ 250µA 0.31 nC @ 4.5 V -8V 11 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
IPL60R2K1C6SATMA1

IPL60R2K1C6SATMA1

MOSFET N-CH 600V 2.3A THIN-PAK

Infineon Technologies

7,703 -
IPL60R2K1C6SATMA1

数据表

CoolMOS™ C6 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 21.6W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-2
NTMFS4847NAT1G

NTMFS4847NAT1G

MOSFET N-CH 30V 11.5A/85A 5DFN

onsemi

5,427 -
NTMFS4847NAT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta), 85A (Tc) 4.5V, 11.5V 4.1mOhm @ 30A, 10V 2.5V @ 250µA 28 nC @ 4.5 V ±16V 2614 pF @ 12 V - 880mW (Ta), 48.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
ISL9N310AS3ST

ISL9N310AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

73,954 -
ISL9N310AS3ST

数据表

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 10mOhm @ 62A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
HUF76105SK8T

HUF76105SK8T

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

72,500 -
HUF76105SK8T

数据表

UltraFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 50mOhm @ 5.5A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 325 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTMS3P03R2G

NTMS3P03R2G

MOSFET P-CH 30V 2.34A 8SOIC

onsemi

2,029 -
NTMS3P03R2G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.34A (Ta) 4.5V, 10V 85mOhm @ 3.05A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 750 pF @ 24 V - 730mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
ISL9N308AD3

ISL9N308AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

55,575 -
ISL9N308AD3

数据表

UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 8mOhm @ 50A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4979N-35G

NTD4979N-35G

MOSFET N-CH 30V 9.4A/41A IPAK

onsemi

7,864 -
NTD4979N-35G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.4A (Ta), 41A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.5V @ 250µA 16.5 nC @ 10 V ±20V 837 pF @ 15 V - 1.38W (Ta), 26.3W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTHD2110TT1G

NTHD2110TT1G

MOSFET P-CH 12V 4.5A CHIPFET

onsemi

7,235 -
NTHD2110TT1G

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 4.5A (Ta) 1.8V, 4.5V 40mOhm @ 6.4A, 4.5V 850mV @ 250µA 14 nC @ 4.5 V ±8V 1072 pF @ 6 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
FDU8878

FDU8878

MOSFET N-CH 30V 11A/40A IPAK

Fairchild Semiconductor

41,569 -
FDU8878

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 40A (Tc) 4.5V, 10V 15mOhm @ 35A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 880 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
2SK2373ZE-TL-E

2SK2373ZE-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

36,000 -
2SK2373ZE-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
3SK298ZP-TL-E

3SK298ZP-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

33,000 -
3SK298ZP-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NDB603AL

NDB603AL

MOSFET N-CH 30V 25A D2PAK

Fairchild Semiconductor

30,000 -
NDB603AL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1100 pF @ 15 V - 50W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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