场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
FDFMJ2P023Z

FDFMJ2P023Z

MOSFET P-CH 20V 2.9A SC75 MICROF

Fairchild Semiconductor

29,990 -
FDFMJ2P023Z

数据表

PowerTrench® 6-WFDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.9A (Ta) 1.5V, 4.5V 112mOhm @ 2.9A, 4.5V 1V @ 250µA 6.5 nC @ 4.5 V ±8V 400 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-75, MicroFET
NTD4855NT4H

NTD4855NT4H

N-CHANNEL POWER MOSFET

onsemi

27,500 -
NTD4855NT4H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTLJS4149PTAG

NTLJS4149PTAG

MOSFET P-CH 30V 2.7A 6WDFN

onsemi

2,581 -
NTLJS4149PTAG

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 2.5V, 4.5V 62mOhm @ 2A, 4.5V 1V @ 250µA 15 nC @ 4.5 V ±12V 960 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
FDMC8884

FDMC8884

MOSFET N-CH 30V 9A/15A 8MLP

onsemi

5,202 -
FDMC8884

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 15A (Tc) 4.5V, 10V 19mOhm @ 9A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 685 pF @ 15 V - 2.3W (Ta), 18W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
2SJ206-T1-AZ

2SJ206-T1-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

23,500 -
2SJ206-T1-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SJ210(0)-T1B-AT

2SJ210(0)-T1B-AT

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

21,000 -
2SJ210(0)-T1B-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SPD30N03S2L20GBTMA1

SPD30N03S2L20GBTMA1

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies

8,268 -
SPD30N03S2L20GBTMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 2V @ 23µA 19 nC @ 10 V ±20V 700 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
2SJ210(0)-T1B-A

2SJ210(0)-T1B-A

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

19,913 -
2SJ210(0)-T1B-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SFT1446-TL-H

SFT1446-TL-H

MOSFET N-CH 60V 20A TP-FA

Sanyo

16,800 -
SFT1446-TL-H

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 4V, 10V 51mOhm @ 10A, 10V 2.6V @ 1mA 16 nC @ 10 V ±20V 750 pF @ 20 V - 1W (Ta), 23W (Tc) 150°C (TJ) - - Surface Mount TP-FA
IPS60R800CEAKMA1

IPS60R800CEAKMA1

CONSUMER

Infineon Technologies

7,734 -
IPS60R800CEAKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tj) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 74W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
2SK1583-AZ

2SK1583-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

14,168 -
2SK1583-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD4970N-1G

NTD4970N-1G

MOSFET N-CH 30V 38A IPAK

onsemi

11,100 -
NTD4970N-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta), 36A (Tc) - 11mOhm @ 30A, 10V 2.5V @ 250µA 8.2 nC @ 4.5 V - 774 pF @ 15 V - - - - - Through Hole IPAK
NTMFS4936NCT1G

NTMFS4936NCT1G

11.6A, 30V, 0.0048OHM, N-CHANNE

Fairchild Semiconductor

10,500 -
NTMFS4936NCT1G

数据表

- 8-PowerTDFN, 5 Leads Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 11.6A (Ta), 79A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 10V 2.2V @ 250µA 43 nC @ 10 V ±20V 3044 pF @ 15 V - 920mW (Ta), 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
ECH8311-TL-H

ECH8311-TL-H

PCH 2.5V DRIVE SERIES

onsemi

9,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3408-TL-E

CPH3408-TL-E

NCH 4V DRIVE SERIES

onsemi

9,000 -
CPH3408-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4847NT1G

NTMFS4847NT1G

MOSFET N-CH 30V 11.5A/85A 5DFN

onsemi

3,866 -
NTMFS4847NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta), 85A (Tc) 4.5V, 11.5V 4.1mOhm @ 30A, 10V 2.5V @ 250µA 28 nC @ 4.5 V ±16V 2614 pF @ 12 V - 880mW (Ta), 48.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
RFD8P06LE

RFD8P06LE

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,200 -
RFD8P06LE

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 5V 300mOhm @ 8A, 5V 2V @ 250µA 30 nC @ 10 V ±10V 675 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
ECH8410-TL-H

ECH8410-TL-H

MOSFET N-CH 30V 12A SOT28FL/ECH8

Sanyo

6,975 -
ECH8410-TL-H

数据表

- 8-SMD, Flat Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) - 10mOhm @ 6A, 10V 2.6V @ 1mA 31 nC @ 10 V ±20V 1700 pF @ 10 V - 1.6W (Ta) 150°C - - Surface Mount SOT-28FL/ECH8
HUFA75321D3

HUFA75321D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor

6,970 -
HUFA75321D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
BSC0908NS

BSC0908NS

N-CHANNEL POWER MOSFET

Infineon Technologies

6,400 -
BSC0908NS

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户