场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
GSF3416

GSF3416

MOSFET, N-CHANNEL, 20V, 6.5A, SO

Good-Ark Semiconductor

5,975 -
GSF3416

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 1.8V, 4.5V 27mOhm @ 6.5A, 4.5V 1V @ 250µA 8 nC @ 4.5 V ±12V 660 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
GSFC3415

GSFC3415

MOSFET, P-CH, SINGLE, -4.00A, -2

Good-Ark Semiconductor

5,523 -
GSFC3415

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.8V, 4.5V 36mOhm @ 4A, 4.5V 900mV @ 250µA 10.2 nC @ 4.5 V ±10V 1181.1 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
SFU9130TU

SFU9130TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,040 -
SFU9130TU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 9.8A (Tc) 10V 300mOhm @ 4.9A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
HUF76107D3ST

HUF76107D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,730 -
HUF76107D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±20V 315 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
3400

3400

N30V,RD(MAX)<27M@10V,RD(MAX)<33M

Goford Semiconductor

4,484 -
3400

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Tc) 4.5V, 10V 27mOhm @ 3A, 10V 1.3V @ 250µA 16 nC @ 4.5 V ±12V 552 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
G9435S

G9435S

P-30V,-5.1A,RD(MAX)<55M@-10V,VTH

Goford Semiconductor

3,890 -
G9435S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 5.1A (Tc) 4.5V, 10V 55mOhm @ 5.1A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 1040 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
2301

2301

P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8

Goford Semiconductor

3,793 -
2301

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Tc) 2.5V, 4.5V 56mOhm @ 1.7A, 4.5V 900mV @ 250µA 8.5 nC @ 2.5 V ±12V 640 pF @ 10 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
MTD2N40E

MTD2N40E

N-CHANNEL POWER MOSFET

onsemi

3,230 -
MTD2N40E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
ECH8410-TL-H

ECH8410-TL-H

MOSFET N-CH 30V 12A 8ECH

onsemi

2,131 -

-

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4V, 10V 10mOhm @ 6A, 10V - 31 nC @ 10 V ±20V 1700 pF @ 10 V - 1.6W (Ta) 150°C (TJ) - - Surface Mount 8-ECH
FDV304P-EV

FDV304P-EV

MOSFET P-CH 25V SOT23

EVVO

3,000 -
FDV304P-EV

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 2.5V, 4.5V 65mOhm @ 4A, 4.5V 1.3V @ 250µA 9.4 nC @ 4.5 V ±12V 954 pF @ 15 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount SOT-23
IRF613

IRF613

N-CHANNEL POWER MOSFET

Harris Corporation

2,940 -
IRF613

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Tc) 10V 2.4Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
RQJ0603LGDQAWS#H6

RQJ0603LGDQAWS#H6

P CH MOS FET POWER SWITCHING

Renesas Electronics Corporation

2,940 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFU110

IRFU110

4.7A 100V 0.540 OHM N-CHANNEL

Harris Corporation

2,825 -
IRFU110

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
SSF3913S

SSF3913S

MOSFET, P-CH, SINGLE, -4A, -30V,

Good-Ark Semiconductor

2,616 -
SSF3913S

数据表

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Tc) 4.5V, 10V 75mOhm @ 4A, 10V 2.2V @ 250µA 8 nC @ 4.5 V ±20V 810 pF @ 15 V - 1.56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
HUF75307D3ST_NL

HUF75307D3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,597 -
HUF75307D3ST_NL

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) 10V 90mOhm @ 15A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
NTD4970NT4G

NTD4970NT4G

MOSFET N-CH 30V 8.5A/36A DPAK

onsemi

5,054 -
NTD4970NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta), 36A (Tc) 4.5V, 10V 11mOhm @ 30A, 10V 2.5V @ 250µA 8.2 nC @ 4.5 V ±20V 774 pF @ 15 V - 1.38W (Ta), 24.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
SSP1N50B

SSP1N50B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,000 -
SSP1N50B

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 520 V 1.5A (Tc) 10V 5.3Ohm @ 750mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 340 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
ISL9N310AD3ST_NL

ISL9N310AD3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,125 -
ISL9N310AD3ST_NL

数据表

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
RFP4N06

RFP4N06

N-CHANNEL POWER MOSFET

Harris Corporation

1,079 -
RFP4N06

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTF3055-160T1

NTF3055-160T1

MOSFET N-CH 60V 2A SOT223

onsemi

8,881 -
NTF3055-160T1

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 10V 160mOhm @ 1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 280 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount SOT-223 (TO-261)
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