二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MSRT150140D

MSRT150140D

DIODE MOD GP 1400V 150A 3TOWER

GeneSiC Semiconductor

8,780 -
MSRT150140D

数据表

- Three Tower Bulk Active 1 Pair Series Connection Standard 1400 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT150160D

MSRT150160D

DIODE MOD GP 1600V 150A 3TOWER

GeneSiC Semiconductor

9,200 -
MSRT150160D

数据表

- Three Tower Bulk Active 1 Pair Series Connection Standard 1600 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20035R

MBRT20035R

DIODE MOD SCHOTT 35V 100A 3TOWER

GeneSiC Semiconductor

9,660 -
MBRT20035R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 35 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20040R

MBRT20040R

DIODE MOD SCHOTT 40V 100A 3TOWER

GeneSiC Semiconductor

2,701 -
MBRT20040R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 40 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBR40035CTR

MBR40035CTR

DIODE MOD SCHOTT 35V 200A 2TOWER

GeneSiC Semiconductor

6,525 -
MBR40035CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 35 V 200A 700 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 35 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBRT20035

MBRT20035

DIODE MOD SCHOTT 35V 100A 3TOWER

GeneSiC Semiconductor

6,521 -
MBRT20035

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 35 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBR40035CT

MBR40035CT

DIODE MOD SCHOTT 35V 200A 2TOWER

GeneSiC Semiconductor

3,033 -
MBR40035CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 35 V 200A 700 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 35 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40040CT

MBR40040CT

DIODE MOD SCHOTT 40V 200A 2TOWER

GeneSiC Semiconductor

9,604 -
MBR40040CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 40 V 200A 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40040CTR

MBR40040CTR

DIODE MOD SCHOTT 40V 200A 2TOWER

GeneSiC Semiconductor

4,918 -
MBR40040CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 40 V 200A 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40020CT

MBR40020CT

DIODE MOD SCHOTT 20V 200A 2TOWER

GeneSiC Semiconductor

9,780 -
MBR40020CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 20 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40020CTR

MBR40020CTR

DIODE MOD SCHOTT 20V 200A 2TOWER

GeneSiC Semiconductor

8,144 -
MBR40020CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 20 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40030CT

MBR40030CT

DIODE MOD SCHOTT 30V 200A 2TOWER

GeneSiC Semiconductor

9,383 -
MBR40030CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 30 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40030CTR

MBR40030CTR

DIODE MOD SCHOTT 30V 200A 2TOWER

GeneSiC Semiconductor

4,484 -
MBR40030CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 30 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40045CT

MBR40045CT

DIODE MOD SCHOTT 45V 200A 2TOWER

GeneSiC Semiconductor

8,271 -
MBR40045CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 45 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40045CTR

MBR40045CTR

DIODE MOD SCHOTT 45V 200A 2TOWER

GeneSiC Semiconductor

9,905 -
MBR40045CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 45 V 200A 650 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40060CT

MBR40060CT

DIODE MOD SCHOTT 60V 200A 2TOWER

GeneSiC Semiconductor

6,712 -
MBR40060CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 60 V 200A 800 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40060CTR

MBR40060CTR

DIODE MOD SCHOTT 60V 200A 2TOWER

GeneSiC Semiconductor

9,845 -
MBR40060CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 60 V 200A 800 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40080CT

MBR40080CT

DIODE MOD SCHOTT 80V 200A 2TOWER

GeneSiC Semiconductor

3,089 -
MBR40080CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 200A 840 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR40080CTR

MBR40080CTR

DIODE MOD SCHOTT 80V 200A 2TOWER

GeneSiC Semiconductor

7,909 -
MBR40080CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 80 V 200A 840 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBRT200100R

MBRT200100R

DIODE MOD SCHOT 100V 100A 3TOWER

GeneSiC Semiconductor

4,282 -
MBRT200100R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky, Reverse Polarity 100 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
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