二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MBRT20020

MBRT20020

DIODE MOD SCHOTT 20V 100A 3TOWER

GeneSiC Semiconductor

3,680 -
MBRT20020

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 20 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20020R

MBRT20020R

DIODE MOD SCHOTT 20V 100A 3TOWER

GeneSiC Semiconductor

3,556 -
MBRT20020R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 20 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20030

MBRT20030

DIODE MOD SCHOTT 30V 100A 3TOWER

GeneSiC Semiconductor

4,740 -
MBRT20030

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 30 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20030R

MBRT20030R

DIODE MOD SCHOTT 30V 100A 3TOWER

GeneSiC Semiconductor

3,033 -
MBRT20030R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 30 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20045

MBRT20045

DIODE MOD SCHOTT 45V 100A 3TOWER

GeneSiC Semiconductor

6,947 -
MBRT20045

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 45 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20045R

MBRT20045R

DIODE MOD SCHOTT 45V 100A 3TOWER

GeneSiC Semiconductor

7,637 -
MBRT20045R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 45 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20080

MBRT20080

DIODE MOD SCHOTT 80V 100A 3TOWER

GeneSiC Semiconductor

7,345 -
MBRT20080

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 80 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT20080R

MBRT20080R

DIODE MOD SCHOTT 80V 100A 3TOWER

GeneSiC Semiconductor

3,815 -
MBRT20080R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 80 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBR400150CT

MBR400150CT

DIODE MOD SCHOT 150V 200A 2TOWER

GeneSiC Semiconductor

3,039 -
MBR400150CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR400150CTR

MBR400150CTR

DIODE MOD SCHOT 150V 200A 2TOWER

GeneSiC Semiconductor

9,752 -
MBR400150CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 150 V 200A 880 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR400200CT

MBR400200CT

DIODE MOD SCHOT 200V 200A 2TOWER

GeneSiC Semiconductor

5,642 -
MBR400200CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 200A 920 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR400200CTR

MBR400200CTR

DIODE MOD SCHOT 200V 200A 2TOWER

GeneSiC Semiconductor

4,953 -
MBR400200CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200 V 200A 920 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBRT200150

MBRT200150

DIODE MOD SCHOT 150V 100A 3TOWER

GeneSiC Semiconductor

5,840 -
MBRT200150

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT200150R

MBRT200150R

DIODE MOD SCHOT 150V 100A 3TOWER

GeneSiC Semiconductor

4,342 -
MBRT200150R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT200200

MBRT200200

DIODE MOD SCHOT 200V 100A 3TOWER

GeneSiC Semiconductor

2,190 -
MBRT200200

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBRT200200R

MBRT200200R

DIODE MOD SCHOT 200V 100A 3TOWER

GeneSiC Semiconductor

3,926 -
MBRT200200R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBR60020CTL

MBR60020CTL

DIODE MOD SCHOTT 20V 300A 2TOWER

GeneSiC Semiconductor

3,060 -

-

- Twin Tower Bulk Obsolete 1 Pair Common Cathode Schottky 20 V 300A 580 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60020CTRL

MBR60020CTRL

DIODE MOD SCHOTT 20V 300A 2TOWER

GeneSiC Semiconductor

9,524 -

-

- Twin Tower Bulk Obsolete 1 Pair Common Anode Schottky 20 V 300A 580 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60030CTL

MBR60030CTL

DIODE MOD SCHOTT 30V 300A 2TOWER

GeneSiC Semiconductor

4,440 -

-

- Twin Tower Bulk Obsolete 1 Pair Common Cathode Schottky 30 V 300A 580 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 30 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60030CTRL

MBR60030CTRL

DIODE MOD SCHOTT 30V 300A 2TOWER

GeneSiC Semiconductor

7,629 -

-

- Twin Tower Bulk Obsolete 1 Pair Common Anode Schottky 30 V 300A 580 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 30 V -55°C ~ 150°C - - Chassis Mount Twin Tower
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