二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MSRTA200160AD

MSRTA200160AD

DIODE MOD GP 1600V 200A 3TOWER

GeneSiC Semiconductor

6,010 -

-

- Three Tower Bulk Active 1 Pair Series Connection Standard 1600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MDMA425P1600PTSF

MDMA425P1600PTSF

DIODE MOD GP 1600V 425A SIMBUS F

IXYS

7,963 -
MDMA425P1600PTSF

数据表

MDMA425P1600PTSF SimBus F Box Active - Standard 1600 V 425A - - - - - - - Chassis Mount SimBus F
PD260MYN16

PD260MYN16

DIODE MOD GP 1600V 260A MOD

KYOCERA AVX

3,784 -
PD260MYN16

数据表

- Module Bulk Active 1 Pair Series Connection Standard 1600 V 260A 1.24 V @ 750 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount Module
MSC2X50SDA170J

MSC2X50SDA170J

DIODE MOD SIC 1700V 50A SOT227

Microchip Technology

9,030 -

-

- SOT-227-4, miniBLOC Tube Active 2 Independent SiC (Silicon Carbide) Schottky 1700 V 50A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227 (ISOTOP®)
MSC2X51SDA170J

MSC2X51SDA170J

DIODE MOD SIC 1700V 50A SOT227

Microchip Technology

7,802 -
MSC2X51SDA170J

数据表

- SOT-227-4, miniBLOC Tube Active 2 Independent SiC (Silicon Carbide) Schottky 1700 V 50A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227 (ISOTOP®)
DD171N12KKHPSA1

DD171N12KKHPSA1

DIODE MOD GP 1200V 171A MOD

Infineon Technologies

9,917 -
DD171N12KKHPSA1

数据表

DD171N Module Bulk Obsolete 1 Pair Series Connection Standard 1200 V 171A 1.26 V @ 500 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V 150°C - - Chassis Mount Module
VS-VSKD270-08

VS-VSKD270-08

DIODE MOD GP 800V 270A MAGNAPAK

Vishay General Semiconductor - Diodes Division

8,181 -
VS-VSKD270-08

数据表

- 3-MAGN-A-PAK™ Bulk Obsolete 1 Pair Series Connection Standard 800 V 270A - Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis Mount MAGN-A-PAK®
VS-VSKD320-08

VS-VSKD320-08

DIODE MOD GP 800V 320A MAGNAPAK

Vishay General Semiconductor - Diodes Division

9,153 -
VS-VSKD320-08

数据表

- 3-MAGN-A-PAK™ Bulk Obsolete 1 Pair Series Connection Standard 800 V 320A - Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis Mount MAGN-A-PAK®
MURTA200120

MURTA200120

DIODE MOD GP 1200V 100A 3TOWER

GeneSiC Semiconductor

3,225 -
MURTA200120

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 100A 2.6 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA200120R

MURTA200120R

DIODE MOD GP 1200V 100A 3TOWER

GeneSiC Semiconductor

2,664 -
MURTA200120R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 1200 V 100A 2.6 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA20020

MURTA20020

DIODE MODULE GP 200V 100A 3TOWER

GeneSiC Semiconductor

9,644 -
MURTA20020

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 100A 1.3 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA20020R

MURTA20020R

DIODE MODULE GP 200V 100A 3TOWER

GeneSiC Semiconductor

6,232 -
MURTA20020R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 100A 1.3 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA20040

MURTA20040

DIODE MODULE GP 400V 100A 3TOWER

GeneSiC Semiconductor

8,227 -
MURTA20040

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 100A 1.3 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA20040R

MURTA20040R

DIODE MODULE GP 400V 100A 3TOWER

GeneSiC Semiconductor

4,441 -
MURTA20040R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 400 V 100A 1.3 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA20060

MURTA20060

DIODE MODULE GP 600V 100A 3TOWER

GeneSiC Semiconductor

3,522 -
MURTA20060

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 100A 1.7 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA20060R

MURTA20060R

DIODE MODULE GP 600V 100A 3TOWER

GeneSiC Semiconductor

2,290 -
MURTA20060R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 100A 1.7 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
F1842CAD1200

F1842CAD1200

DIODE MODULE GP 1200V 40A MODULE

Sensata-Crydom

6,885 -
F1842CAD1200

数据表

- Module Bulk Obsolete 1 Pair Common Anode Standard 1200 V 40A (DC) 1.4 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
F1842CCD1200

F1842CCD1200

DIODE MODULE GP 1200V 40A MODULE

Sensata-Crydom

9,554 -
F1842CCD1200

数据表

- Module Bulk Obsolete 1 Pair Common Cathode Standard 1200 V 40A (DC) 1.4 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
F1842RD1000

F1842RD1000

DIODE MODULE GP 1000V 40A MODULE

Sensata-Crydom

9,118 -
F1842RD1000

数据表

- Module Bulk Not For New Designs 1 Pair Series Connection Standard 1000 V 40A (DC) 1.4 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
MDD310-22N1

MDD310-22N1

DIODE MODULE GP 2200V 305A Y2DCB

IXYS

6,925 -
MDD310-22N1

数据表

- Y2-DCB Box Active 1 Pair Series Connection Standard 2200 V 305A 1.2 V @ 600 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 2200 V -40°C ~ 150°C - - Chassis Mount Y2-DCB
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