单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
S3D50065D1

S3D50065D1

DIODE SIL CARB 650V 112A TO247AD

SMC Diode Solutions

244 -
S3D50065D1

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 112A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 3100pF @ 0V, 100MHz - - Through Hole TO-247AD -55°C ~ 175°C
STPSC20065DY

STPSC20065DY

DIODE SIL CARB 650V 20A TO220AC

STMicroelectronics

498 -
STPSC20065DY

数据表

ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 600 V 1250pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
VS-HFA16PB120-N3

VS-HFA16PB120-N3

DIODE GP 1.2KV 16A TO247AC

Vishay General Semiconductor - Diodes Division

891 -
VS-HFA16PB120-N3

数据表

- TO-247-2 Tube Active Standard 1200 V 16A 3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 20 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AC Modified -55°C ~ 150°C
DNA30E2200FE

DNA30E2200FE

DIODE GEN PURP 2.2KV 30A I4-PAC

IXYS

109 -
DNA30E2200FE

数据表

- TO-251-2, IPAK Tube Active Standard 2200 V 30A 1.25 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole i4-PAC -55°C ~ 175°C
FFSH3065B-F085

FFSH3065B-F085

DIODE SIL CARB 650V 37A TO247-2

onsemi

466 -
FFSH3065B-F085

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 37A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1260pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
C6D20065A

C6D20065A

DIODE SIL CARB 650V 66A TO220-2

Wolfspeed, Inc.

351 -
C6D20065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 66A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 1153pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-40HFR120

VS-40HFR120

DIODE GEN PURP 1.2KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

106 -
VS-40HFR120

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
STPSC15H12G2Y-TR

STPSC15H12G2Y-TR

DIODE SIL CARB 1.2KV 15A D2PAK

STMicroelectronics

931 -
STPSC15H12G2Y-TR

数据表

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 1200 V 1200pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
UJ3D1220KSD

UJ3D1220KSD

DIODE SIL CARB 1.2KV 10A TO247-3

Qorvo

1,188 -
UJ3D1220KSD

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 1200 V 1020pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
1N3891

1N3891

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

887 -
1N3891

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
VS-60EPF12-M3

VS-60EPF12-M3

DIODE GP 1.2KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

494 -
VS-60EPF12-M3

数据表

- TO-247-2 Tube Active Standard 1200 V 60A 1.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
1N3595US

1N3595US

DIODE GEN PURP 4A B SQ-MELF

Microchip Technology

158 -
1N3595US

数据表

- SQ-MELF, B Bulk Active Standard - 4A 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs 1 nA @ 125 V - - - Surface Mount B, SQ-MELF -65°C ~ 150°C
DSEP15-12CR

DSEP15-12CR

DIODE GP 1.2KV 15A ISOPLUS247

IXYS

265 -
DSEP15-12CR

数据表

HiPerDynFRED™ TO-247-3 Tube Active Standard 1200 V 15A 4.04 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 100 µA @ 1200 V - - - Through Hole ISOPLUS247™ -55°C ~ 175°C
1N1184

1N1184

DIODE GEN PURP 100V 35A DO5

GeneSiC Semiconductor

191 -
1N1184

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
CDLL5711

CDLL5711

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

265 -
CDLL5711

数据表

- DO-213AA Bulk Active Schottky 50 V 33mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 150°C
1N1184A

1N1184A

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor

260 -
1N1184A

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.1 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 200°C
SCS320AJTLL

SCS320AJTLL

DIODE SIL CARBIDE 650V 20A LPTL

Rohm Semiconductor

612 -
SCS320AJTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 1000pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
1N5416US

1N5416US

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

111 -
1N5416US

数据表

- SQ-MELF, E Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - - - Surface Mount D-5B -65°C ~ 175°C
MSC030SDA120B

MSC030SDA120B

DIODE SIL CARB 1.2KV 30A TO247

Microchip Technology

1,046 -
MSC030SDA120B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.5 V @ 30 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
DSEP60-12A

DSEP60-12A

DIODE GEN PURP 1.2KV 60A TO247AD

IXYS

258 -
DSEP60-12A

数据表

HiPerFRED™ TO-247-2 Tube Active Standard 1200 V 60A 2.66 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 650 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
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