场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
ECH8419-TL-H

ECH8419-TL-H

MOSFET N-CH 35V 9A 8ECH

onsemi

8,296 -

-

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35 V 9A (Ta) 4V, 10V 17mOhm @ 5A, 10V 2.6V @ 1mA 19 nC @ 10 V ±20V 960 pF @ 20 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-ECH
SFU9214TU

SFU9214TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

56,998 -
SFU9214TU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 1.53A (Tc) 10V 4Ohm @ 770mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 295 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
SPS01N60C3

SPS01N60C3

MOSFET N-CH 650V 800MA TO251-3

Infineon Technologies

2,763 -
SPS01N60C3

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 800mA (Tc) 10V 6Ohm @ 500mA, 10V 3.9V @ 250µA 5 nC @ 10 V ±20V 100 pF @ 25 V - 11W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
IPS60R1K0PFD7SAKMA1

IPS60R1K0PFD7SAKMA1

MOSFET N-CH 650V 4.7A TO251-3

Infineon Technologies

2,926 -
IPS60R1K0PFD7SAKMA1

数据表

CoolMOS™PFD7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 1Ohm @ 1A, 10V 4.5V @ 50µA 6 nC @ 10 V ±20V 230 pF @ 400 V - 26W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
FQD1N60TF

FQD1N60TF

MOSFET N-CH 600V 1A DPAK

Fairchild Semiconductor

42,509 -
FQD1N60TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 5V @ 250µA 6 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NDP603AL

NDP603AL

MOSFET N-CH 30V 25A TO220-3

Fairchild Semiconductor

34,234 -
NDP603AL

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1100 pF @ 15 V - 50W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
IPA50R650CEXKSA2

IPA50R650CEXKSA2

MOSFET N-CH 500V 4.6A TO220

Infineon Technologies

4,344 -
IPA50R650CEXKSA2

数据表

CoolMOS™ CE TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.6A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V - 27.2W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
IRFM220BTF

IRFM220BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

24,000 -
IRFM220BTF

数据表

- TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 1.13A (Tc) 10V 800mOhm @ 570mA, 10V 4V @ 250µA 16 nC @ 10 V ±30V 390 pF @ 25 V - 2.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
NTTS2P02R2G

NTTS2P02R2G

MOSFET P-CH 20V 2.4A MICRO8

onsemi

2,939 -
NTTS2P02R2G

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.5V, 4.5V 90mOhm @ 2.4A, 4.5V 1.4V @ 250µA 18 nC @ 4.5 V ±8V 550 pF @ 16 V - 780mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-MSOP
IPB147N03LGATMA1

IPB147N03LGATMA1

MOSFET N-CH 30V 20A D2PAK

Infineon Technologies

7,665 -
IPB147N03LGATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 14.7mOhm @ 20A, 10V 2.2V @ 250µA 10 nC @ 10 V ±20V 1000 pF @ 15 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
NTD20N03L27-1G

NTD20N03L27-1G

MOSFET N-CH 30V 20A IPAK

onsemi

3,508 -
NTD20N03L27-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4V, 5V 27mOhm @ 10A, 5V 2V @ 250µA 18.9 nC @ 10 V ±20V 1260 pF @ 25 V - 1.75W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
BSP129L6906

BSP129L6906

N-CHANNEL POWER MOSFET

Infineon Technologies

16,000 -
BSP129L6906

数据表

SIPMOS® TO-261-4, TO-261AA Bulk Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
MMFT1N10ET1

MMFT1N10ET1

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

12,845 -
MMFT1N10ET1

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IPP114N03LGHKSA1

IPP114N03LGHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies

12,496 -
IPP114N03LGHKSA1

数据表

OptiMOS™ 3 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 11.4mOhm @ 30A, 10V 2.2V @ 250µA 14 nC @ 10 V ±20V 1500 pF @ 15 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
BUK7237-55A,118

BUK7237-55A,118

MOSFET N-CH 55V 32.3A DPAK

Nexperia USA Inc.

8,545 -
BUK7237-55A,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 32.3A (Tc) 10V 37mOhm @ 25A, 10V 4V @ 1mA - ±20V 872 pF @ 25 V - 77W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
SSF2318E

SSF2318E

MOSFET, N-CH, SINGLE, 6.5A, 20V,

Good-Ark Semiconductor

10,962 -
SSF2318E

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A 1.8V, 4.5V 22mOhm @ 6.5A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±8V 1160 pF @ 10 V - 1.4W -55°C ~ 150°C - - Surface Mount SOT-23
FDD050N03B

FDD050N03B

MOSFET N-CH 30V 50A DPAK

onsemi

6,202 -
FDD050N03B

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 25A, 10V 3V @ 250µA 43 nC @ 10 V ±16V 2875 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
FDZ299P

FDZ299P

MOSFET P-CH 20V 4.6A 9BGA

Fairchild Semiconductor

9,000 -
FDZ299P

数据表

PowerTrench® 9-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 2.5V, 4.5V 55mOhm @ 4.6A, 4.5V 1.5V @ 250µA 9 nC @ 4.5 V ±12V 742 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 9-BGA (2x2.1)
FSS262-TL-E

FSS262-TL-E

NCH 4V DRIVE SERIES

onsemi

6,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
SFU9210TU

SFU9210TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,740 -
SFU9210TU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 1.6A (Tc) 10V 3Ohm @ 800mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 285 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
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