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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-20ETS12STRL-M3

VS-20ETS12STRL-M3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

8,686 -
VS-20ETS12STRL-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-E5TX3006S2L-M3

VS-E5TX3006S2L-M3

DIODE GEN PURP 600V 30A TO263AB

Vishay General Semiconductor - Diodes Division

797 -
VS-E5TX3006S2L-M3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 39 ns 20 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
RFUH20TB3SNZC9

RFUH20TB3SNZC9

DIODE GEN PURP 350V 20A TO220NFM

Rohm Semiconductor

913 -
RFUH20TB3SNZC9

数据表

- TO-220-2 Full Pack Tube Active Standard 350 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 nA @ 350 V - - - Through Hole TO-220NFM 150°C
C6D04065E

C6D04065E

DIODE SIL CARB 650V 16A TO252-2

Wolfspeed, Inc.

3,644 -
C6D04065E

数据表

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 256pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
ISL9R1560P2-F085

ISL9R1560P2-F085

DIODE GEN PURP 600V 15A TO220-2

onsemi

633 -
ISL9R1560P2-F085

数据表

Stealth™ TO-220-2 Tube Active Avalanche 600 V 15A 2.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 100 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
RBQ30NS45BFHTL

RBQ30NS45BFHTL

DIODE SCHOTTKY 45V 30A LPDS

Rohm Semiconductor

995 -
RBQ30NS45BFHTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 30A 590 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 45 V - Automotive AEC-Q101 Surface Mount LPDS 150°C (Max)
FFSD0665B

FFSD0665B

DIODE SIL CARB 650V 9.1A DPAK

onsemi

854 -
FFSD0665B

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 9.1A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
SDUR3020W

SDUR3020W

DIODE GEN PURP 200V 30A TO247AC

SMC Diode Solutions

2,827 -
SDUR3020W

数据表

- TO-247-2 Tube Active Standard 200 V 30A 1.2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - - - Through Hole TO-247AC -55°C ~ 150°C
UJ3D1205TS

UJ3D1205TS

DIODE SIL CARB 1.2KV 5A TO220-2

Qorvo

27,393 -
UJ3D1205TS

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 1200 V 250pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5PX7506L-N3

VS-E5PX7506L-N3

DIODE GEN PURP 600V 75A TO247AD

Vishay General Semiconductor - Diodes Division

1,037 -
VS-E5PX7506L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 75A 2.2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 48 ns 25 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
DSEP15-06A

DSEP15-06A

DIODE GEN PURP 600V 15A TO220AC

IXYS

210 -
DSEP15-06A

数据表

HiPerFRED™ TO-220-2 Tube Active Standard 600 V 15A 2.04 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 100 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 175°C
STPSC4H065D

STPSC4H065D

DIODE SIL CARB 650V 4A TO220AC

STMicroelectronics

448 -
STPSC4H065D

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.75 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 200pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
STTH30RQ06W

STTH30RQ06W

DIODE GEN PURP 600V 30A DO247

STMicroelectronics

332 -
STTH30RQ06W

数据表

ECOPACK® DO-247-2 (Straight Leads) Tube Active Standard 600 V 30A 2.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 40 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
VS-30EPH06L-N3

VS-30EPH06L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

1,343 -
VS-30EPH06L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - - - Through Hole TO-247AD -65°C ~ 175°C
MUR3060BS-BP

MUR3060BS-BP

DIODE GEN PURP 600V 30A TO247AD

Micro Commercial Co

1,642 -
MUR3060BS-BP

数据表

- TO-247-2 Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 5 µA @ 600 V 200pF @ 4V, 1MHz - - Through Hole TO-247AD -55°C ~ 150°C
SCS208AGC17

SCS208AGC17

DIODE SIL CARB 650V 8A TO220ACFP

Rohm Semiconductor

901 -
SCS208AGC17

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.55 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 160 µA @ 600 V 291pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
VS-20ETF12SLHM3

VS-20ETF12SLHM3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

3,426 -
VS-20ETF12SLHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
APT30D40BG

APT30D40BG

DIODE GP 400V 30A TO247

Microchip Technology

345 -
APT30D40BG

数据表

- TO-247-2 Tube Active Standard 400 V 30A 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 32 ns 250 µA @ 400 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
STTH3006W

STTH3006W

DIODE GEN PURP 600V 30A DO247

STMicroelectronics

1,882 -
STTH3006W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 600 V 30A 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
STPS20M100ST

STPS20M100ST

DIODE SCHOTTKY 100V 20A TO220

STMicroelectronics

679 -
STPS20M100ST

数据表

- TO-220-3 Tube Active Schottky 100 V 20A 850 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 40 µA @ 100 V - - - Through Hole TO-220 150°C (Max)
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