场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM70TAM19CT3AG

MSCSM70TAM19CT3AG

MOSFET 6N-CH 700V 124A SP3F

Microchip Technology

1 -
MSCSM70TAM19CT3AG

数据表

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70DUM017AG

MSCSM70DUM017AG

MOSFET 2N-CH 700V 1021A

Microchip Technology

5,247 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM600D12P4G103

BSM600D12P4G103

MOSFET 2N-CH 1200V 567A MODULE

Rohm Semiconductor

2,691 -
BSM600D12P4G103

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 567A (Tc) - 4.8V @ 291.2mA - 59000pF @ 10V 1.78kW (Tc) 175°C (TJ) - - Chassis Mount Module
MSCSM170AM058CT6LIAG

MSCSM170AM058CT6LIAG

MOSFET 2N-CH 1700V 353A

Microchip Technology

3,712 -
MSCSM170AM058CT6LIAG

数据表

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB650M17HM3

CAB650M17HM3

MOSFET 2N-CH 1700V 916A MODULE

Wolfspeed, Inc.

1 -
CAB650M17HM3

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 916A (Tc) 1.86mOhm @ 650A, 15V 3.6V @ 305mA 2988nC @ 15V 97300pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
FF2600UXTR33T2M1BPSA1

FF2600UXTR33T2M1BPSA1

MOSFET 2N-CH 3300V AG-XHP2K33

Infineon Technologies

8,488 -
FF2600UXTR33T2M1BPSA1

数据表

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 3300V (3.3kV) 720A (Tc) 3.1mOhm @ 750A, 15V 5.55V @ 675mA 3750nC @ 15V 152000pF @ 1.8kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K33
SSM6N68NU,LF

SSM6N68NU,LF

MOSFET 2N-CH 30V 4A 6DFN

Toshiba Semiconductor and Storage

16 -
SSM6N68NU,LF

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A (Ta) 84mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V 2W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
DMN2016LFG-7

DMN2016LFG-7

MOSFET 2N-CH 20V 5.2A 8DFN

Diodes Incorporated

5,306 -
DMN2016LFG-7

数据表

- 8-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 18mOhm @ 6A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1472pF @ 10V 770mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN3030-8
ZXMN3A06DN8TA

ZXMN3A06DN8TA

MOSFET 2N-CH 30V 4.9A 8SO

Diodes Incorporated

13 -
ZXMN3A06DN8TA

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
BUK9V13-40HX

BUK9V13-40HX

MOSFET 2N-CH 40V 42A LFPAK56D

Nexperia USA Inc.

6 -
BUK9V13-40HX

数据表

TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 40V 42A (Ta) 13.6mOhm @ 10A, 10V 2.2V @ 1mA 19.4nC @ 10V 1160pF @ 25V 46W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
STS1DNC45

STS1DNC45

MOSFET 2N-CH 450V 0.4A 8SOIC

STMicroelectronics

7,067 -
STS1DNC45

数据表

SuperMESH™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 450V 400mA 4.5Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 160pF @ 25V 1.6W 150°C (TJ) - - Surface Mount 8-SOIC
ALD110900SAL

ALD110900SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

9,418 -
ALD110900SAL

数据表

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1116PAL

ALD1116PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

7,888 -
ALD1116PAL

数据表

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1117PAL

ALD1117PAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

9,185 -
ALD1117PAL

数据表

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1102SAL

ALD1102SAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

12 -
ALD1102SAL

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD210800SCL

ALD210800SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

19 -
ALD210800SCL

数据表

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD1102PAL

ALD1102PAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

22 -
ALD1102PAL

数据表

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD110800ASCL

ALD110800ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

23 -
ALD110800ASCL

数据表

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD1101ASAL

ALD1101ASAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,264 -
ALD1101ASAL

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110800APCL

ALD110800APCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

4 -
ALD110800APCL

数据表

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
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